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参数资料
| 型号： | DMN2300UFB4-7B |
| 厂商： | Diodes Inc |
| 文件页数： | 1/7页 |
| 文件大小： | 0K |
| 描述： | MOSF N CH 20V 1.3A DFN1006H4-3 |
| 标准包装： | 1 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 20V |
| 电流 - 连续漏极(Id) @ 25° C： | 1.3A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 175 毫欧 @ 300mA，4.5V |
| Id 时的 Vgs(th)（最大）： | 950mV @ 250µA |
| 闸电荷(Qg) @ Vgs： | 1.6nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 64.3pF @ 25V |
| 功率 - 最大： | 470mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 3-XFDFN |
| 供应商设备封装： | 3-DFN1006H4（1.0x0.6） |
| 包装： | 标准包装 |
| 其它名称： | DMN2300UFB4-7BDIDKR |
A Product Line of
Diodes Incorporated
DMN2300UFB4
20V N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
Features
Footprint of just 0.6mm – thirteen times smaller than SOT23
V (BR)DSS
20V
R DS(ON)
175m Ω @ V GS = 4.5V
240m Ω @ V GS = 2.5V
360m Ω @ V GS = 1.8V
500m Ω @ V GS = 1.5V
I D
T A = +25°C
(Note 5)
1.30A
1.11A
0.91A
0.82A
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2
0.4mm profile – ideal for low profile applications
Low Gate Threshold Voltage
Fast Switching Speed
ESD Protected Gate 2KV
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
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Qualified to AEC-Q101 Standards for High Reliability
Description
This MOSFET has been designed to minimize the on-state resistance
Mechanical Data
(R DS(on) ) and yet maintain superior switching performance, making it
ideal for high efficiency power management applications.
Applications
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Case: X2-DFN1006-3
Case Material: Molded Plastic, “Green” Molding Compound. UL
Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish – NiPdAu over Copper leadframe. Solderable
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Load switch
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per MIL-STD-202, Method 208 e4
Weight: 0.001 grams (approximate)
Drain
X2-DFN1006-3
D
S
Gate
Body
Diode
G
Gate
ESD PROTECTED TO 2kV
Protection
Diode
Source
Ordering Information (Note 4)
Bottom View
Top View
Internal Schematic
Equivalent Circuit
Part Number
DMN2300UFB4-7B
Marking
NL
Reel size (inches)
7
Tape width (mm)
8
Quantity per reel
10,000
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com.
Marking Information
DMN2300UFB4-7B
NL
Top View
Bar Denotes Gate
and Source Side
NL = Product Type Marking Code
DMN2300UFB4
Document number: DS35269 Rev. 4 - 2
1 of 7
www.diodes.com
September 2012
? Diodes Incorporated
相关PDF资料 |
PDF描述 |
|---|---|
| DMN2300UFD-7 | MOSFET N-CH 20V 1.73A 3UDFN |
| DMN2400UFB-7 | MOSF N CH 20V 750MA X1-DFN1006-3 |
| DMN2400UFB4-7 | MOSFET N-CH 20V 750MA DFN1006H4 |
| DMN2400UV-7 | MOSFET 2N-CH 20V 1.33A SOT563 |
| DMN2500UFB4-7 | MOSF N CH 20V 810A X2-DFN1006-3 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| DMN2300UFB-7 | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:20V N-CHANNEL ENHANCEMENT MODE MOSFET |
| DMN2300UFB-7B | 功能描述:MOSFET MOSFET BVDSS RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| DMN2300UFD | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:20V N-CHANNEL ENHANCEMENT MODE MOSFET |
| DMN2300UFD-7 | 功能描述:MOSFET MOSFET BVDSS: 8V-24V X1-DFN1212-3,3K RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| DMN2300UFL4-7 | 功能描述:MOSFET 20V Dual N-Ch Enh 200mOhm 8V VGSS RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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