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| 型号： | DMN2300UFD-7 |
| 厂商： | Diodes Inc |
| 文件页数： | 1/7页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 20V 1.73A 3UDFN |
| 标准包装： | 1 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 20V |
| 电流 - 连续漏极(Id) @ 25° C： | 1.21A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 200 毫欧 @ 900mA，4.5V |
| Id 时的 Vgs(th)（最大）： | 950mV @ 250µA |
| 闸电荷(Qg) @ Vgs： | 2nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 67.62pF @ 25V |
| 功率 - 最大： | 470mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 3-UDFN |
| 供应商设备封装： | X1-DFN1212-3 |
| 包装： | 标准包装 |
| 其它名称： | DMN2300UFD-7DIDKR |
A Product Line of
Diodes Incorporated
DMN2300UFD
20V N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
Features and Benefits
V (BR)DSS
20V
R DS(on) Max
200m Ω @ V GS = 4.5V
260m Ω @ V GS = 2.5V
400m Ω @ V GS = 1.8V
I D max
T A = 25 ° C
(Notes 4)
1.73A
1.50A
1.27A
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Low Gate Threshold Voltage
Fast Switching Speed
“Lead Free”, RoHS Compliant (Note 1)
Halogen and Antimony Free. "Green" Device (Note 2)
ESD Protected Gate 2KV
Qualified to AEC-Q101 Standards for High Reliability
500m Ω @ V GS = 1.5V
1.15A
Mechanical Data
Description and Applications
This MOSFET has been designed to minimize the on-state resistance
(R DS(on) ) and yet maintain superior switching performance, making it
ideal for high efficiency power management applications.
? Load switch
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Case: X1-DFN1212-3
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish NiPdAu over Copper leadframe. Solderable
per MIL-STD-202, Method 208
Weight: 0.005 grams (approximate)
Drain
X1-DFN1212-3
Body
Diode
Gate
Gate
Protection
Diode
Source
Top View
Bottom View
Equivalent Circuit
Pin-out Top view
Ordering Information (Note 3)
Part Number
DMN2300UFD-7
Marking
KS2
Reel size (inches)
7
Tape width (mm)
8
Quantity per reel
3000
Notes:
1. No purposefully added lead
2. Diodes Inc's "Green" policy can be found on our website at http://www.diodes.com.
3. For packaging details, go to our website at http://www.diodes.com.
Marking Information
KS2 = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: Y = 2011)
M = Month (ex: 9 = September)
Date Code Key
Year
Code
2011
Y
2012
Z
2013
A
2014
B
2015
C
2016
D
2017
E
Month
Code
Jan
1
Feb
2
Mar
3
Apr
4
May
5
Jun
6
Jul
7
Aug
8
Sep
9
Oct
O
Nov
N
Dec
D
DMN2300UFD
Datasheet Number: DS35443 Rev. 2 - 2
1 of 7
www.diodes.com
September 2011
? Diodes Incorporated
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| DMN26D0UDJ-7 | MOSFET 2N-CH 20V 230MA SOT963 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| DMN2300UFL4-7 | 功能描述:MOSFET 20V Dual N-Ch Enh 200mOhm 8V VGSS RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| DMN2400UFB4 | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:N-CHANNEL ENHANCEMENT MODE MOSFET |
| DMN2400UFB4-7 | 功能描述:MOSFET MOSFET N-CHANNEL DFN DFN1006-H43 GREEN 3K RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| DMN2400UFB4-7B | 制造商:Zetex / Diodes Inc 功能描述:Trans MOSFET N-CH 20V 0.75A 3-Pin DFN-H4 T/R 制造商:Diodes Zetex 功能描述:Trans MOSFET N-CH 20V 0.75A 3-Pin DFN-H4 T/R |
| DMN2400UFB-7 | 功能描述:MOSFET MOSFET BVDSS: 8V-24V X1-DFN1006-3 T&R 3K RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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