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参数资料
| 型号： | DMN2400UFB-7 |
| 厂商： | Diodes Inc |
| 文件页数： | 1/6页 |
| 文件大小： | 0K |
| 描述： | MOSF N CH 20V 750MA X1-DFN1006-3 |
| 标准包装： | 1 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 20V |
| 电流 - 连续漏极(Id) @ 25° C： | 750mA |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 550 毫欧 @ 600mA，4.5V |
| Id 时的 Vgs(th)（最大）： | 900mV @ 250µA |
| 闸电荷(Qg) @ Vgs： | 0.5nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 36pF @ 16V |
| 功率 - 最大： | 470µW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 3-XFDFN |
| 供应商设备封装： | 3-X1DFN1006 |
| 包装： | 标准包装 |
| 其它名称： | DMN2400UFB-7DIDKR |
DMN2400UFB
N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
Features and Benefits
V (BR)DSS
20V
R DS(ON) max
0.55 ? @ V GS = 4.5V
0.75 ? @ V GS = 2.5V
I D max
T A = 25°C
0.75A
0.63A
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Low On-Resistance
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Ultra-Small Surface Mount Package
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ESD Protected up to 1.5kV
Lead-Free Finish; RoHS compliant (Note 1)
Description and Applications
This MOSFET has been designed to minimize the on-state resistance
(R DS(on) ) and yet maintain superior switching performance, making it
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Halogen and Antimony Free. “Green” Device (Note 2)
Qualified to AEC-Q101 standards for High Reliability
ideal for high efficiency power management applications.
Mechanical Data
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Battery Charging
Power Management Functions
DC-DC Converters
Portable Power Adaptors
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Case: X1-DFN1006-3
Case Material: Molded Plastic, "Green" Molding Compound. UL
Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections Indicator: Collector Dot
Terminals: Finish ? NiPdAu over Copper leadframe. Solderable
per MIL-STD-202, Method 208
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Weight: 0.001 grams (approximate)
Drain
X1-DFN1006-3
Gate
S
D
Gate
G
Protection
Diode
Source
ESD PROTECTED TO 1.5kV
Bottom View
Top View
Package Pin Configuration
Equivalent Circuit
Ordering Information (Note 3)
Part Number
DMN2400UFB-7
DMN2400UFB-7B
Case
X1-DFN1006-3
X1-DFN1006-3
Packaging
3,000/Tape & Reel
10,000/Tape & Reel
Notes:
1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. No purposely added lead. Halogen and Antimony free
2. Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com.
3. For packaging details, go to our website at http://www.diodes.com.
Marking Information
NB
NB = Product Type Marking Code
Dot Denotes Drain Side
DMN2400UFB
Document number: DS31963 Rev. 3 - 2
1 of 6
www.diodes.com
April 2012
? Diodes Incorporated
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| DMN2500UFB4-7 | 功能描述:MOSFET MOSFET BVDSS: 8V-24V 2-DFN1006-3 T&R 3K RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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