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| 型号： | DMN2400UFB-7 |
| 厂商： | Diodes Inc |
| 文件页数： | 2/6页 |
| 文件大小： | 0K |
| 描述： | MOSF N CH 20V 750MA X1-DFN1006-3 |
| 标准包装： | 1 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 20V |
| 电流 - 连续漏极(Id) @ 25° C： | 750mA |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 550 毫欧 @ 600mA，4.5V |
| Id 时的 Vgs(th)（最大）： | 900mV @ 250µA |
| 闸电荷(Qg) @ Vgs： | 0.5nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 36pF @ 16V |
| 功率 - 最大： | 470µW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 3-XFDFN |
| 供应商设备封装： | 3-X1DFN1006 |
| 包装： | 标准包装 |
| 其它名称： | DMN2400UFB-7DIDKR |
DMN2400UFB
Maximum Ratings @T A = 25°C unless otherwise specified
Drain-Source Voltage
Gate-Source Voltage
Characteristic
Symbol
V DSS
V GSS
Value
20
±12
Units
V
V
Continuous Drain Current (Note 4) V GS = 4.5V
Continuous Drain Current (Note 4) V GS = 2.5V
Pulsed Drain Current (Note 5)
Steady
State
Steady
State
T A = 25 ° C
T A = 85 ° C
T A = 25 ° C
T A = 85 ° C
I D
I D
I DM
0.75
0.55
0.63
0.45
3
A
A
A
Thermal Characteristics
@T A = 25°C unless otherwise specified
Characteristic
Total Power Dissipation (Note 4)
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
Symbol
P D
R θ JA
T J, T STG
Value
0.47
258
-55 to +150
Units
mW
°C/W
°C
Electrical Characteristics @T A = 25°C unless otherwise specified
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current T J = 25°C
Gate-Source Leakage
Gate-Source Leakage
BV DSS
I DSS
I GSS
I GSS
20
-
-
-
-
-
-
-
-
100
±1.0
±50
V
nA
μ A
μ A
V GS = 0V, I D = 250 μ A
V DS = 20V, V GS = 0V
V GS = ±4.5V, V DS = 0V
V GS = ±10V, V DS = 0V
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage
V GS(th)
0.5
-
0.9
V
V DS = V GS , I D = 250 μ A
-
-
0.55
V GS = 4.5V, I D = 600mA
Static Drain-Source On-Resistance
R DS (ON)
-
-
0.75
Ω
V GS = 2.5V, I D = 500mA
-
-
0.9
V GS = 1.8V, I D = 350mA
Forward Transfer Admittance
Diode Forward Voltage (Note 6)
|Y fs |
V SD
-
1.0
0.7
-
1.2
S
V
V DS = 10V, I D = 400mA
V GS = 0V, I S = 150mA
DYNAMIC CHARACTERISTICS (Note 7)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
C iss
C oss
C rss
Q g
Q gs
Q gd
t D(on)
t r
t D(off)
t f
-
-
-
-
-
-
-
-
-
-
36.0
5.7
4.2
0.5
0.07
0.1
4.11
3.82
14.8
9.6
-
-
-
-
-
-
-
-
-
-
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
V DS = 16V, V GS = 0V,
f = 1.0MHz
V GS =4.5V, V DS = 10V,
I D = 250mA
V DD = 10V, V GS = 4.5V,
R L = 47 ? , R G = 10 ? ,
I D = 200mA
Notes:
4. Device mounted on FR-4 PCB, with minimum recommended pad layout.
5. Device mounted on minimum recommended pad layout test board, 10 μ s pulse duty cycle = 1%.
6. Short duration pulse test used to minimize self-heating effect.
7. Guaranteed by design. Not subject to product testing.
DMN2400UFB
Document number: DS31963 Rev. 3 - 2
2 of 6
www.diodes.com
April 2012
? Diodes Incorporated
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