参数资料
型号: DMN2300UFD-7
厂商: Diodes Inc
文件页数: 2/7页
文件大小: 0K
描述: MOSFET N-CH 20V 1.73A 3UDFN
标准包装: 1
FET 型: MOSFET N 通道,金属氧化物
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 20V
电流 - 连续漏极(Id) @ 25° C: 1.21A
开态Rds(最大)@ Id, Vgs @ 25° C: 200 毫欧 @ 900mA,4.5V
Id 时的 Vgs(th)(最大): 950mV @ 250µA
闸电荷(Qg) @ Vgs: 2nC @ 4.5V
输入电容 (Ciss) @ Vds: 67.62pF @ 25V
功率 - 最大: 470mW
安装类型: 表面贴装
封装/外壳: 3-UDFN
供应商设备封装: X1-DFN1212-3
包装: 标准包装
其它名称: DMN2300UFD-7DIDKR
A Product Line of
Diodes Incorporated
DMN2300UFD
Maximum Ratings @T A = 25°C unless otherwise specified
Drain-Source Voltage
Gate-Source Voltage
Characteristic
Symbol
V DSS
V GSS
Value
20
±8
Unit
V
V
Continuous Drain Current
Pulsed Drain Current (Note 6)
Steady
State
T A = 25°C (Note 4)
T A = 85°C (Note 4)
T A = 25°C (Note 5)
I D
I DM
1.73
1.34
1.21
6.0
A
A
Thermal Characteristics @T A = 25°C unless otherwise specified
Characteristic
Symbol
Value
Unit
Power Dissipation
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
(Note 4)
(Note 5)
(Note 4)
(Note 5)
P D
R θ JA
T J , T STG
0.96
0.47
130
265
-55 to +150
W
W
°C/W
°C/W
°C
Notes:
4. For a device surface mounted on 15mm x 15mm x 1.6mm FR4 PCB with high coverage of 2oz copper, in still air conditions; the device is measured
when operating in a steady-state condition.
5. Same as note 4, except the device is mounted on minimum recommended pad layout .
6. Device mounted on minimum recommended pad layout test board, 10μs pulse duty cycle = 1%.
Thermal Characteristics
10
10
I D W =1ms
D (A
10
9
8
Single Pulse
R θ JA = 136 ° C/W
R θ JA (t) = R θ JA *r(t)
T J - T A = P*R θ JA
1
(A) @P
I
)@
P
W =
s
R DS(ON)
Limited
A)
I D (
=1
@P
=1
)@
=1
(A
@
I D (
I D (
ms
@
7
6
5
4
3
0.1
0.01
I D (
@
A)
DC
W
I D
0s
P W
A)
s
P W
A)
00
=1
P W
0m
s
2
T J(MAX) = 150 ° C
1
T A = 25 ° C
Single Pulse
I D (A) @
P W =10μs
0
0.0001 0.001
0.01 0.1 1 10 100 1000
0.001
0.1
1
10
100
t1, PULSE DURATION TIME (sec)
Fig. 1 Single Pulse Maximum Power Dissipation
V DS , DRAIN-SOURCE VOLTAGE (V)
Fig. 2 SOA, Safe Operation Area
DMN2300UFD
Datasheet Number: DS35443 Rev. 2 - 2
2 of 7
www.diodes.com
September 2011
? Diodes Incorporated
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