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参数资料
| 型号： | DMN2230U-7 |
| 厂商： | Diodes Inc |
| 文件页数： | 1/5页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 20V 2A SOT23-3 |
| 产品变化通告： | Encapsulate Change 15/May/2008 Copper Bond Wire Change 3/May/2011 |
| 标准包装： | 1 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 20V |
| 电流 - 连续漏极(Id) @ 25° C： | 2A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 110 毫欧 @ 2.5A，4.5V |
| Id 时的 Vgs(th)（最大）： | 1V @ 250µA |
| 输入电容 (Ciss) @ Vds： | 188pF @ 10V |
| 功率 - 最大： | 600mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-236-3，SC-59，SOT-23-3 |
| 供应商设备封装： | SOT-23-3 |
| 包装： | 标准包装 |
| 产品目录页面： | 1577 (CN2011-ZH PDF) |
| 其它名称： | DMN2230U-7DIDKR |
DMN2230U
N-CHANNEL ENHANCEMENT MODE MOSFET
Features
Mechanical Data
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Low On-Resistance
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Case: SOT23
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110 m Ω @ V GS = 4.5V
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Case Material: Molded Plastic, “Green” Molding
?
?
?
?
? 145 m Ω @ V GS = 2.5V
? 230 m Ω @ V GS = 1.8V
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Lead, Halogen and Antimony Free, RoHS Compliant
?
?
?
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Compound. UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Diagram
Terminals: Finish ? Matte Tin annealed over Copper
leadframe. Solderable per MIL-STD-202, Method 208
Weight: 0.008 grams (approximate)
"Green" Device (Notes 1, 2 and 3)
?
Qualified to AEC-Q101 Standards for High Reliability
SOT23
D
G
S
Ordering Information (Note 4)
Top View
Top View
Internal Schematic
Notes:
Part Number
DMN2230U-7
1. No purposefully added lead. Halogen and Antimony Free.
Case
SOT23
Packaging
3000/Tape & Reel
2. Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
3. Product manufactured with Green Molding Compound and does not contain Halogens or Sb 2 O 3 Fire Retardants.
4. For packaging details, go to our website at http://www.diodes.com.
Marking Information
22N = Marking Code
22N
YM = Date Code Marking
Y = Year (ex: U = 2007)
M = Month (ex: 9 = September)
Date Code Key
Year
Code
2007
U
2008
V
2009
W
2010
X
2011
Y
2012
Z
2013
A
2014
B
2015
C
2016
D
2017
E
Month
Code
Jan
1
Feb
2
Mar
3
Apr
4
May
5
Jun
6
Jul
7
Aug
8
Sep
9
Oct
O
Nov
N
Dec
D
DMN2230U
Document number: DS31180 Rev. 5 - 2
1 of 5
www.diodes.com
January 2012
? Diodes Incorporated
相关PDF资料 |
PDF描述 |
|---|---|
| DMN2300U-7 | MOSFET N-CH 20V 1.24A SOT23 |
| DMN2300UFB4-7B | MOSF N CH 20V 1.3A DFN1006H4-3 |
| DMN2300UFD-7 | MOSFET N-CH 20V 1.73A 3UDFN |
| DMN2400UFB-7 | MOSF N CH 20V 750MA X1-DFN1006-3 |
| DMN2400UFB4-7 | MOSFET N-CH 20V 750MA DFN1006H4 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| DMN2250UFB-7B | 制造商:Diodes Incorporated 功能描述:MOSFET BVDSS: 8V-24V X1-DFN1006-3 T&R 10K - Tape and Reel 制造商:Diodes Incorporated 功能描述:MOSF N CH 20V 1.35A X1DFN10063 制造商:Diodes Incorporated 功能描述:MOSFET N-channel 20V 1.35A DFN1006-3 |
| DMN2300U | 制造商:TYSEMI 制造商全称:TY Semiconductor Co., Ltd 功能描述:20V N-CHANNEL ENHANCEMENT MODE MOSFET IN SOT23 ESD Protected Gate 2kV |
| DMN2300U-7 | 功能描述:MOSFET MOSFET BVDSS: 8V-24V SOT23,3K RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| DMN2300UFB | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:20V N-CHANNEL ENHANCEMENT MODE MOSFET |
| DMN2300UFB4 | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:20V N-CHANNEL ENHANCEMENT MODE MOSFET |
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