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| 型号： | DMN2230U-7 |
| 厂商： | Diodes Inc |
| 文件页数： | 2/5页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 20V 2A SOT23-3 |
| 产品变化通告： | Encapsulate Change 15/May/2008 Copper Bond Wire Change 3/May/2011 |
| 标准包装： | 1 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 20V |
| 电流 - 连续漏极(Id) @ 25° C： | 2A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 110 毫欧 @ 2.5A，4.5V |
| Id 时的 Vgs(th)（最大）： | 1V @ 250µA |
| 输入电容 (Ciss) @ Vds： | 188pF @ 10V |
| 功率 - 最大： | 600mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-236-3，SC-59，SOT-23-3 |
| 供应商设备封装： | SOT-23-3 |
| 包装： | 标准包装 |
| 产品目录页面： | 1577 (CN2011-ZH PDF) |
| 其它名称： | DMN2230U-7DIDKR |
DMN2230U
Maximum Ratings @T A = 25°C unless otherwise specified
Characteristic
Drain-Source Voltage
Gate-Source Voltage
Drain Current (Note 5)
Pulsed Drain Current (Note 6)
Thermal Characteristics
@T A = 25°C unless otherwise specified
Characteristic
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
Symbol
V DSS
V GSS
I D
I DM
Symbol
P D
R θ JA
T J , T STG
Value
20
±12
2.0
7
Value
600
208
-55 to +150
Units
V
V
A
A
Units
mW
°C/W
°C
Electrical Characteristics @T A = 25°C unless otherwise specified
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
BV DSS
I DSS
I GSS
20
?
?
?
?
?
?
1
± 10
V
μ A
μ A
V GS = 0V, I D = 10 μ A
V DS = 20V, V GS = 0V
V GS = ± 12V, V DS = 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
Static Drain-Source On-Resistance
V GS(th)
R DS (ON)
0.5
?
?
81
113
1.0
110
145
V
m Ω
V DS = V CS , I D = 250 μ A
V GS = 4.5V, I D = 2.5A
V GS = 2.5V, I D = 1.5A
170
230
V GS = 1.8V, I D = 1.0A
Forward Transfer Admittance
Diode Forward Voltage (Note 7)
|Y fs |
V SD
?
?
5
0.8
?
1.1
S
V
V DS = 5V, I D = 2.4A
V GS = 0V, I S = 1.05A
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
C iss
C oss
C rss
Q g
Q gs
Q gd
t d(on)
t r
t d(off)
t f
?
?
?
?
?
?
?
?
?
?
188
44
30
2.3
0.3
0.5
8
3.8
19.6
8.3
?
?
?
?
?
?
?
?
?
?
pF
pF
pF
nC
nC
nC
ns
V DS = 10V, V GS = 0V
f = 1.0MHz
V DS = 10V, I D = 11.6A
V DD = 10V, R L = 10 Ω
I D = 1A, V GEN = 4.5V, R G = 6 Ω
Notes:
5. Device mounted on FR-4 PCB, or minimum recommended pad layout
6. Repetitive rating, pulse width limited by junction temperature.
7. Short duration pulse test used to minimize self-heating effect.
DMN2230U
Document number: DS31180 Rev. 5 - 2
2 of 5
www.diodes.com
January 2012
? Diodes Incorporated
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