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参数资料
| 型号： | DMN2170U-7 |
| 厂商： | Diodes Inc |
| 文件页数： | 4/4页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 20V 2.3A SOT23-3 |
| 产品变化通告： | Encapsulate Change 15/May/2008 End Of Life 16/Aug/2010 Copper Bond Wire Change 3/May/2011 |
| 产品目录绘图： | SOT-23 Package Top SOT-23 Package Side 1 SOT-23 Package Side 2 |
| 标准包装： | 1 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 20V |
| 电流 - 连续漏极(Id) @ 25° C： | 2.3A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 70 毫欧 @ 3A，4.5V |
| Id 时的 Vgs(th)（最大）： | 1V @ 250µA |
| 输入电容 (Ciss) @ Vds： | 217pF @ 10V |
| 功率 - 最大： | 600mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-236-3，SC-59，SOT-23-3 |
| 供应商设备封装： | SOT-23-3 |
| 包装： | 标准包装 |
| 其它名称： | DMN2170UDIDKR |
DMN2170U
Suggested Pad Layout
Y
Dimensions Value (in mm)
Z
G
C
Z
G
3.4
0.7
X
Y
C
0.9
1.4
2.0
X
E
E
0.9
IMPORTANT NOTICE
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product
described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall
assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website,
harmless against all damages.
LIFE SUPPORT
Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written
approval of the President of Diodes Incorporated.
DMN2170U
Document number: DS31182 Rev. 4 - 2
4 of 4
www.diodes.com
June 2008
? Diodes Incorporated
相关PDF资料 |
PDF描述 |
|---|---|
| DMN21D2UFB-7B | MOSFET N CH 20V X1-DFN1006-3 |
| DMN2215UDM-7 | MOSFET N-CH 20V 2A SOT-26 |
| DMN2230U-7 | MOSFET N-CH 20V 2A SOT23-3 |
| DMN2300U-7 | MOSFET N-CH 20V 1.24A SOT23 |
| DMN2300UFB4-7B | MOSF N CH 20V 1.3A DFN1006H4-3 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| DMN21D2UFB-7B | 功能描述:MOSFET MOSFET BVDSS: 8V-24V X1-DFN1006-3 T&R 10K RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| DMN2215UDM | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
| DMN2215UDM-7 | 功能描述:MOSFET 650mW 20V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| DMN2230U | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
| DMN2230U-7 | 功能描述:MOSFET 600mW 20Vdss RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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