参数资料
型号: DMN3024SFG-7
厂商: Diodes Inc
文件页数: 2/7页
文件大小: 0K
描述: MOSFET N-CH 30V 7.5A PWRDI3333-8
标准包装: 1
FET 型: MOSFET N 通道,金属氧化物
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 30V
电流 - 连续漏极(Id) @ 25° C: 7.5A
开态Rds(最大)@ Id, Vgs @ 25° C: 23 毫欧 @ 10A,10V
Id 时的 Vgs(th)(最大): 2.4V @ 250µA
闸电荷(Qg) @ Vgs: 10.5nC @ 10V
输入电容 (Ciss) @ Vds: 478.9pF @ 15V
功率 - 最大: 890mW
安装类型: 表面贴装
封装/外壳: 8-PowerWDFN
供应商设备封装: PowerDI3333-8
包装: 标准包装
其它名称: DMN3024SFG-7DIDKR
DMN3024SFG
Maximum Ratings @T A = 25°C unless otherwise specified
Drain-Source Voltage
Gate-Source Voltage
Characteristic
Symbol
V DSS
V GSS
Value
30
±25
Units
V
V
Continuous Drain Current (Note 6) V GS = 10V
Continuous Drain Current (Note 6) V GS = 4.5V
Pulsed Drain Current (10 μ s pulse, duty cycle = 1%)
Avalanche Current (Note 7)
Repetitive Avalanche Energy (Note 7)
Steady
State
t<10s
Steady
State
t<10s
T A = 25°C
T A = 70°C
T A = 25°C
T A = 70°C
T A = 25°C
T A = 70°C
T A = 25°C
T A = 70°C
I D
I D
I D
I D
I DM
I AS
E AS
7.5
6.0
10.5
8.5
6.3
5.0
8.5
7.6
60
9
12
A
A
A
A
A
A
mJ
Thermal Characteristics @T A = 25°C unless otherwise specified
Characteristic
Symbol
Value
Units
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Total Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient (Note 6)
Thermal Resistance, Junction to Case (Note 6)
Operating and Storage Temperature Range
T A = 25°C
T A = 70°C
Steady state
t<10s
T A = 25°C
T A = 70°C
Steady state
t<10s
P D
R θ JA
P D
R θ JA
R θ JC
T J, T STG
0.9
0.5
145
74
2.2
1.4
58
31
11
-55 to +150
W
°C/W
W
°C/W
°C
Notes:
5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
7 .UIS in production with L = 0.3mH, TJ = 25°C
POWERDI is a registered trademark of Diodes Incorporated
DMN3024SFG
Document number: DS35439 Rev. 3 - 2
2 of 7
www.diodes.com
May 2012
? Diodes Incorporated
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