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| 型号： | DMN32D2LFB4-7 |
| 厂商： | Diodes Inc |
| 文件页数： | 2/5页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 30V 300MA 3-DFN |
| 其它图纸： | DFN1006H4-3 Side DFN1006H4-3 Bottom |
| 标准包装： | 1 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 300mA |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 1.2 欧姆 @ 100mA，4V |
| Id 时的 Vgs(th)（最大）： | 1.2V @ 250µA |
| 输入电容 (Ciss) @ Vds： | 39pF @ 3V |
| 功率 - 最大： | 350mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 3-XFDFN |
| 供应商设备封装： | 3-DFN1006H4（1.0x0.6） |
| 包装： | 标准包装 |
| 产品目录页面： | 1577 (CN2011-ZH PDF) |
| 其它名称： | DMN32D2LFB4DIDKR |
DMN32D2LFB4
Maximum Ratings (@T A = +25°C, unless otherwise specified.)
Drain Source Voltage
Gate-Source Voltage
Drain Current (Note 5)
Characteristic
Symbol
V DSS
V GSS
I D
Value
30
? 10
300
Unit
V
V
mA
Thermal Characteristics
(@T A = +25°C, unless otherwise specified.)
Total Power Dissipation (Note 5) @T A = 25°C
Thermal Resistance, Junction to Ambient (Note 5)
Operating and Storage Temperature Range
P D
R Θ JA
T J , T STG
350
357
-55 to +150
mW
? C/W
? C
Electrical Characteristics (@T A = +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage
BV DSS
30
?
?
V
V GS = 0V, I D = 10 ? A
Zero Gate Voltage Drain Current
Gate-Body Leakage
@ T C = +25°C
I DSS
I GSS
?
?
?
?
1
? 10
? 500
? A
? A
nA
V DS = 30V, V GS = 0V
V GS = ±10V, V DS = 0V
V GS = ±5V, V DS = 0V
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transconductance
Source-Drain Diode Forward Voltage
V GS(th)
R DS (ON)
|Y fs |
V SD
0.6
??
??
?
100
0.5
?
??
??
?
?
?
1.2
2.2
1.5
1.2
?
1.4
V
?
mS
V
V DS = V GS , I D = 250 ? A
V GS = 1.8V, I D = 20mA
V GS = 2.5V, I D = 20mA
V GS = 4.0V, I D = 100mA
V DS =10V, I D = 0.1A
V GS = 0V, I S = 115mA
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
C iss
C oss
C rss
?
?
?
39
10
3.6
78
20
7.2
pF
pF
pF
V DS = 3V, V GS = 0V
f = 1.0MHz
Switching Time
Turn-on Time
Turn-off Time
t on
t off
??
??
11
51
22
102
nS
nS
V DD = 5V, I D = 10mA,
V GS = 0-5V
Notes:
5. Device mounted on FR-4 PCB, pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at
http://www.diodes.com.
6. Short duration pulse test used to minimize self-heating effect.
DMN32D2LFB4
Document number: DS31124 Rev. 7 - 2
2 of 5
www.diodes.com
June 2013
? Diodes Incorporated
相关PDF资料 |
PDF描述 |
|---|---|
| DMN32D2LV-7 | MOSFET N-CH DUAL 30V SOT-563 |
| DMN3300U-7 | MOSFET N-CH 30V 2A SOT23-3 |
| DMN3404L-7 | MOSFET N-CH 30V 5.8A SOT-23 |
| DMN3730U-7 | MOSFET N-CH 30V 750MA SOT23 |
| DMN3730UFB-7 | MOSFET N-CH 30V 750MA DFN |
相关代理商/技术参数 |
参数描述 |
|---|---|
| DMN32D2LV | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
| DMN32D2LV-7 | 功能描述:MOSFET Dual N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| DMN3300U | 制造商:Diodes Incorporated 功能描述:MOSFET N CH W DIODE 30V 2A SOT23 制造商:Diodes Incorporated 功能描述:MOSFET, N CH, W DIODE, 30V, 2A, SOT23 制造商:Diodes Incorporated 功能描述:MOSFET, N CH, W DIODE, 30V, 2A, SOT23; Transistor Polarity:N Channel; Continuous Drain Current Id:2A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.1ohm; Rds(on) Test Voltage Vgs:4.5V; Power Dissipation Pd:600mW ;RoHS Compliant: Yes |
| DMN3300U-7 | 功能描述:MOSFET 600mW 30Vdss RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| DMN3300U-7-F | 制造商:TYSEMI 制造商全称:TY Semiconductor Co., Ltd 功能描述:Product specification |
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