- 您现在的位置：买卖IC网 > Datasheet目录406 > DMN3300U-7 (Diodes Inc)MOSFET N-CH 30V 2A SOT23-3 Datasheet资料下载
参数资料
| 型号： | DMN3300U-7 |
| 厂商： | Diodes Inc |
| 文件页数： | 2/5页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 30V 2A SOT23-3 |
| 产品变化通告： | Encapsulate Change 15/May/2008 Copper Bond Wire Change 3/May/2011 |
| 标准包装： | 3,000 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 2A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 150 毫欧 @ 4.5A，4.5V |
| Id 时的 Vgs(th)（最大）： | 1V @ 250µA |
| 输入电容 (Ciss) @ Vds： | 193pF @ 10V |
| 功率 - 最大： | 600mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-236-3，SC-59，SOT-23-3 |
| 供应商设备封装： | SOT-23-3 |
| 包装： | 带卷 (TR) |
DMN3300U
Maximum Ratings (@T A = +25°C, unless otherwise specified.)
Drain-Source Voltage
Gate-Source Voltage
Characteristic
Symbol
V DSS
V GSS
Value
30
±12
Units
V
V
Continuous Drain Current (Note 5) V GS = 4.5V
Continuous Drain Current (Note 6) V GS = 4.5V
Pulsed Drain Current (10μs pulse, duty cycle = 1%)
Maximum Body Diode Continuous Current (Note 6)
Steady
State
Steady
State
T A = +25°C
T A = +70°C
T A = +25°C
T A = +70°C
I D
I D
I DM
I S
1.5
1.2
2.0
1.6
8
1.6
A
A
A
A
Thermal Characteristics
Characteristic
Symbol
Value
Units
Total Power Dissipation
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
Operating and Storage Temperature Range
(Note 5)
(Note 6)
(Note 5)
(Note 6)
(Note 6)
P D
R θ JA
R θ JC
T J, T STG
0.7
1.3
176
102
45
-55 to +150
W
°C/W
°C
Electrical Characteristics (@T A = +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
BV DSS
I DSS
I GSS
30
?
?
37
?
?
?
1
± 10
V
μ A
μ A
V GS = 0V, I D = 100 μ A
V DS = 30V, V GS = 0V
V GS = ± 12V, V DS = 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
V GS(th)
0.5
?
1
V
V DS = V GS , I D = 250 μ A
100
150
V GS = 4.5V, I D = 4.5A
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage
R DS (ON)
|Y fs |
V SD
?
?
?
140
185
240
5
0.8
200
250
300
?
1.1
m Ω
S
V
V GS = 2.5V, I D = 3.5A
V GS = 1.8V, I D = 1.5A
V GS = 1.5V, I D = 0.5A
V DS =5V, I D = 2.4A
V GS = 0V, I = 0.5A
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
C iss
C oss
C rss
t d(on)
t r
t d(off)
t f
?
?
?
?
?
?
?
193
35
23
7
24
24
12
?
?
?
?
?
?
?
pF
pF
pF
ns
V DS = 10V, V GS = 0V
f = 1.0MHz
V DD = 10V, R L = 10 Ω
I D = 1A, V GEN = 4.5V, R G = 6 Ω
Notes:
5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper pad layout
7 .Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to production testing
DMN3300U
Document number: DS31181 Rev. 5 - 2
2 of 5
www.diodes.com
September 2012
? Diodes Incorporated
相关PDF资料 |
PDF描述 |
|---|---|
| DMN3404L-7 | MOSFET N-CH 30V 5.8A SOT-23 |
| DMN3730U-7 | MOSFET N-CH 30V 750MA SOT23 |
| DMN3730UFB-7 | MOSFET N-CH 30V 750MA DFN |
| DMN3730UFB4-7 | MOSFET N-CH 30V 750MA DFN |
| DMN4027SSD-13 | MOSFET 2N-CH 40V 5.4A SO8 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| DMN3300U-7-F | 制造商:TYSEMI 制造商全称:TY Semiconductor Co., Ltd 功能描述:Product specification |
| DMN3404L | 制造商:Diodes Incorporated 功能描述: |
| DMN3404L-7 | 功能描述:MOSFET N-CHANNEL ENHANCEMENT MODE RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| DMN3404LQ-7 | 制造商:Diodes Incorporated 功能描述:MOSFET BVDSS: 25V-30V SOT23 T&R 3K - Tape and Reel |
| DMN36.1A | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | MATCHED PAIR | N-CHANNEL | CHIP |
发布紧急采购，3分钟左右您将得到回复。