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参数资料
| 型号： | DMN3730U-7 |
| 厂商： | Diodes Inc |
| 文件页数： | 2/7页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 30V 750MA SOT23 |
| 标准包装： | 1 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 750mA |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 460 毫欧 @ 200mA，4.5V |
| Id 时的 Vgs(th)（最大）： | 950mV @ 250µA |
| 闸电荷(Qg) @ Vgs： | 1.6nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 64.3pF @ 25V |
| 功率 - 最大： | 450mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-236-3，SC-59，SOT-23-3 |
| 供应商设备封装： | SOT-23 |
| 包装： | 标准包装 |
| 其它名称： | DMN3730U-7DIDKR |
A Product Line of
Diodes Incorporated
DMN3730U
Maximum Ratings @T A = 25°C unless otherwise specified
Drain-Source Voltage
Gate-Source Voltage
Characteristic
Symbol
V DSS
V GSS
Value
30
±8
Unit
V
V
Continuous Drain Current
Pulsed Drain Current (Note 6)
Steady
State
T A = 25°C (Note 5)
T A = 85°C (Note 5)
T A = 25°C (Note 4)
I D
I DM
0.94
0.68
0.75
10
A
A
Thermal Characteristics @T A = 25°C unless otherwise specified
Characteristic
Symbol
Value
Unit
Power Dissipation
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
(Note 4)
(Note 5)
(Note 4)
(Note 5)
P D
R θ JA
T J , T STG
0.45
0.71
275
177
-55 to +150
W
W
°C/W
°C/W
°C
Notes:
4. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout
5. Device mounted on 25mm X 25mm square copper plate with FR-4 substrate PC board, 2oz copper
6. Device mounted on minimum recommended pad layout test board, 10 μ s pulse duty cycle = 1%.
Thermal Characteristics
100
100
90
80
Single Pulse
Rthja = 176C/W
Rthja(t) = Rthja*r(t)
T J - T A = P*Rthja (t)
10
R DS(ON)
Limited
I D (A) @
I D (A) @
P W = 1ms
I D (A) @
P W = 100μs
70
P W = 10ms
60
50
1
I D (A) @
P W = 100ms
I D (A) @ DC
40
30
0.1
I D (A) @
I D (A) @
P W = 10μs
20
10
0.01
T J , (Max) = 150°C
T A = 25°C
Single Pulse
P W = 1s
0
0.001
0.01 0.1 1 10 100 1000
0.001
0.01
0.1 1 10
100
T1, PULSE DURATION SECTION (sec)
Fig. 1 Single Maximum Power Dissipation
V DS , DRAIN-SOURCE VOLTAGE
Fig. 2 SOA, Safe Operation Area
DMN3730U
Datasheet number: DS35308 Rev. 2 - 2
2 of 7
www.diodes.com
July 2011
? Diodes Incorporated
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相关代理商/技术参数 |
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|---|---|
| DMN3730UFB | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:30V N-CHANNEL ENHANCEMENT MODE MOSFET |
| DMN3730UFB4 | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:30V N-CHANNEL ENHANCEMENT MODE MOSFET |
| DMN3730UFB4-7 | 功能描述:MOSFET 30V N-Ch VDSS 30V VGSS 8V VGS 4.5V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| DMN3730UFB4-7B | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:30V N-CHANNEL ENHANCEMENT MODE MOSFET |
| DMN3730UFB-7 | 功能描述:MOSFET 30V N-Ch VDSS 30V VGSS 8V VGS 4.5V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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