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| 型号： | DMN3730U-7 |
| 厂商： | Diodes Inc |
| 文件页数： | 3/7页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 30V 750MA SOT23 |
| 标准包装： | 1 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 750mA |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 460 毫欧 @ 200mA，4.5V |
| Id 时的 Vgs(th)（最大）： | 950mV @ 250µA |
| 闸电荷(Qg) @ Vgs： | 1.6nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 64.3pF @ 25V |
| 功率 - 最大： | 450mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-236-3，SC-59，SOT-23-3 |
| 供应商设备封装： | SOT-23 |
| 包装： | 标准包装 |
| 其它名称： | DMN3730U-7DIDKR |
A Product Line of
Diodes Incorporated
DMN3730U
1
r(t) @ D=0.5
0.1
0.01
0.001
r(t) @ D=0.3
r(t) @ D=0.1
r(t) @ D=0.05
r(t) @ D=0.01
r(t) @ D=0.01
r(t) @ D=0.005
r(t) @ D=Single Pulse
r(t) @ D=0.7
r(t) @ D=0.9
R θ JA (t) = r(t)*R θ JA
R θ JA = 176C/W
Duty Cycle, D = t1/t2
0.000001 0.00001
0.0001
0.001 0.01 0.1 1
10
100
1000
t1, PULSE DURATION TIME (sec)
Fig. 3 Transient Thermal Resistance
Electrical Characteristics @T A = 25°C unless otherwise specified
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
BV DSS
I DSS
I GSS
30
-
-
-
-
-
-
1
3
V
μ A
μ A
V GS = 0V, I D = 10 μ A
V DS = 30V, V GS = 0V
V GS = ±8V, V DS = 0V
ON CHARACTERISTICS
Gate Threshold Voltage
V GS(th)
0.45
-
0.95
V
V DS = V GS , I D = 250 μ A
460
V GS = 4.5V, I D = 200mA
Static Drain-Source On-Resistance (Note 7)
R DS(on)
-
-
560
m Ω
V GS = 2.5V, I D = 100mA
730
V GS = 1.8V, I D = 75mA
Forward Transfer Admittance
Diode Forward Voltage (Note 7)
|Y fs |
V SD
40
-
-
0.7
-
1.2
mS
V
V DS = 3V, I D = 10mA
V GS = 0V, I S = 300mA
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
C iss
C oss
C rss
R g
Q g
Q gs
Q gd
t D(on)
t r
t D(off)
t f
-
-
-
-
-
-
-
-
-
-
-
64.3
6.1
4.5
70
1.6
0.2
0.2
3.5
2.8
38
13
-
-
-
-
-
-
-
-
-
-
-
pF
pF
pF
Ω
nC
nC
nC
ns
ns
ns
ns
V DS = 25V, V GS = 0V,
f = 1.0MHz
V DS = 0V, V GS = 0V, f = 1MHz
V GS = 4.5V, V DS = 15V,
I D = 1A
V DS = 10V, I D = 1A
V GS = 10V, R G = 6 Ω
Notes:
7. Measured under pulsed conditions to minimize self-heating effect. Pulse width ≤ 300 μ s; duty cycle ≤ 2%
8. For design aid only, not subject to production testing.
DMN3730U
Datasheet number: DS35308 Rev. 2 - 2
3 of 7
www.diodes.com
July 2011
? Diodes Incorporated
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相关代理商/技术参数 |
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|---|---|
| DMN3730UFB | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:30V N-CHANNEL ENHANCEMENT MODE MOSFET |
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| DMN3730UFB4-7 | 功能描述:MOSFET 30V N-Ch VDSS 30V VGSS 8V VGS 4.5V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| DMN3730UFB4-7B | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:30V N-CHANNEL ENHANCEMENT MODE MOSFET |
| DMN3730UFB-7 | 功能描述:MOSFET 30V N-Ch VDSS 30V VGSS 8V VGS 4.5V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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