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| 型号： | DMN4027SSD-13 |
| 厂商： | Diodes Inc |
| 文件页数： | 2/8页 |
| 文件大小： | 0K |
| 描述： | MOSFET 2N-CH 40V 5.4A SO8 |
| 标准包装： | 1 |
| FET 型： | 2 个 N 沟道（双） |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 40V |
| 电流 - 连续漏极(Id) @ 25° C： | 5.4A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 27 毫欧 @ 7A，10V |
| Id 时的 Vgs(th)（最大）： | 3V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 12.9nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 604pF @ 20V |
| 功率 - 最大： | 1.8W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SO |
| 包装： | 标准包装 |
| 产品目录页面： | 1473 (CN2011-ZH PDF) |
| 其它名称： | DMN4027SSD-13DKR |
A Product Line of
Diodes Incorporated
DMN4027SSD
Maximum Ratings (@T A = +25°C, unless otherwise specified.)
Drain-Source Voltage
Characteristic
Symbol
V DSS
Value
40
Unit
V
Gate-Source Voltage
(Note 5)
V GS
? 20
V
(Notes 7)
7.1
Continuous Drain Current
V GS = 10V
T A = +70°C (Notes 7)
I D
5.7
A
(Notes 6)
5.4
Pulsed Drain Current
V GS = 10V
(Notes 8)
I DM
28.0
A
Continuous Source Current (Body diode)
Pulsed Source Current (Body diode)
(Notes 7)
(Notes 8)
I S
I SM
3.3
28.0
A
A
Thermal Characteristics (@T A = +25°C, unless otherwise specified.)
Characteristic
(Notes 6 & 9)
Symbol
Value
1.25
10.0
Unit
Power Dissipation
Linear Derating Factor
(Notes 6 & 10)
P D
1.8
14.3
W
mW/ ? C
(Notes 7 & 9)
(Notes 6 & 9)
2.14
17.2
100
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Lead
Operating and Storage Temperature Range
(Notes 6 & 10)
(Notes 7 & 9)
(Notes 9 & 11)
R ? JA
R ? JL
T J , T STG
70
58
53
-55 to +150
? C/W
? C
Notes:
5. AEC-Q101 V GS maximum is ? 16V.
6. For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device is
measured when operating in a steady-state condition.
7. Same as note (3), except the device is measured at t ? 10 sec.
8. Same as note (3), except the device is pulsed with D = 0.02 and pulse width 300μs. The pulse current is limited by the maximum junction temperature.
9. For a dual device with one active die.
10. For a device with two active die running at equal power.
11. Thermal resistance from junction to solder-point (at the end of the drain lead).
DMN4027SSD
Document Number DS33040 Rev 2 - 2
2 of 8
www.diodes.com
April 2013
? Diodes Incorporated
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相关代理商/技术参数 |
参数描述 |
|---|---|
| DMN4027SSS | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:40V N-CHANNEL ENHANCEMENT MODE MOSFET |
| DMN4027SSS-13 | 功能描述:MOSFET MOSFET,N-CHANNEL 40V, 6.1A/- 8A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| DMN4030LK3 | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:40V N-CHANNEL ENHANCEMENT MODE MOSFET |
| DMN4030LK3_10 | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:40V N-CHANNEL ENHANCEMENT MODE MOSFET |
| DMN4030LK3-13 | 功能描述:MOSFET ENHANCE MODE MOSFET 40V N-CHANNEL RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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