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| 型号： | DMP2018LFK-7 |
| 厂商： | Diodes Inc |
| 文件页数： | 2/7页 |
| 文件大小： | 0K |
| 描述： | MOSFET P-CH 20V 9.2A 6-DFN |
| 标准包装： | 1 |
| FET 型： | MOSFET P 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 20V |
| 电流 - 连续漏极(Id) @ 25° C： | 9.2A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 16 毫欧 @ 3.6A，4.5V |
| Id 时的 Vgs(th)（最大）： | 1.2V @ 200µA |
| 闸电荷(Qg) @ Vgs： | 113nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 4748pF @ 10V |
| 功率 - 最大： | 2.05W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 6-UDFN 裸露焊盘 |
| 供应商设备封装： | 6-U-DFN2523 |
| 包装： | 标准包装 |
| 其它名称： | DMP2018LFK-7DIDKR |
DMP2018LFK
Maximum Ratings @T A = 25°C unless otherwise specified
Drain-Source Voltage
Gate-Source Voltage
Characteristic
Symbol
V DSS
V GSS
Value
-20
±12
Units
V
V
Continuous Drain Current (Note 5) V GS = -4.5V
Continuous Drain Current (Note 5) V GS = -2.0V
Steady
State
t<5s
Steady
State
t<5s
T A = 25 ° C
T A = 70 ° C
T A = 25 ° C
T A = 70 ° C
T A = 25 ° C
T A = 70 ° C
T A = 25 ° C
T A = 70 ° C
I D
I D
I D
I D
-9.2
-7.3
-12.8
-10.3
-7.1
-6
-10
-8.3
A
A
A
A
Maximum Continuous Body Diode Forward Current (Note 5)
Pulsed Drain Current (10 μ s pulse, duty cycle = 1%)
Avalanche Current (Note 6)
Repetitive Avalanche Energy (Note 6)
I S
I DM
I AS
E AS
-3
-90
17
72
A
A
A
mJ
Thermal Characteristics
Characteristic
Symbol
Value
Units
Total Power Dissipation (Note 4)
Thermal Resistance, Junction to Ambient (Note 4)
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Thermal Resistance, Junction to Case
Operating and Storage Temperature Range
T A = 25°C
T A = 70°C
Steady State
t<5s
T A = 25°C
T A = 70°C
Steady State
t<5s
P D
R θ JA
P D
R θ JA
R θ JC
T J, T STG
1
0.63
126
60
2.1
1.3
61
29
6.4
-55 to 150
W
°C/W
W
°C/W
°C
Notes:
Notes:
4. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.
5. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal vias to bottom layer 1inch square copper plate
DMP2018LFK
Document number: DS35357 Rev. 5 - 2
2 of 7
www.diodes.com
March 2012
? Diodes Incorporated
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