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参数资料
| 型号： | DMP2039UFDE-7 |
| 厂商： | Diodes Inc |
| 文件页数： | 2/6页 |
| 文件大小： | 0K |
| 描述： | MOSF P CH 25V 6.7A U-DFN2020-6E |
| 标准包装： | 1 |
| FET 型： | MOSFET P 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 25V |
| 电流 - 连续漏极(Id) @ 25° C： | 6.7A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 27 毫欧 @ 6.4A，4.5V |
| Id 时的 Vgs(th)（最大）： | 1V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 48.7nC @ 8V |
| 输入电容 (Ciss) @ Vds： | 2530pF @ 15V |
| 功率 - 最大： | 800mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 6-XDFN |
| 供应商设备封装： | * |
| 包装： | 标准包装 |
| 其它名称： | DMP2039UFDE-7DIDKR |
DMP2039UFDE
Maximum Ratings (@T A = +25°C, unless otherwise specified.)
Drain-Source Voltage
Gate-Source Voltage
Characteristic
Symbol
V DSS
V GSS
Value
-25
±8
Units
V
V
Continuous Drain Current (Note 5) V GS = -4.5V
Continuous Drain Current (Note 5) V GS = -1.8V
Pulsed Drain Current (10μs pulse, duty cycle = 1%)
Continuous Source-Drain Diode Current
Steady
State
t<5s
Steady
State
t<5s
T A = +25°C
T A = +70°C
T A = +25°C
T A = +70°C
T A = +25°C
T A = +70°C
T A = +25°C
T A = +70°C
I D
I D
I D
I D
I DM
I S
-6.7
-5.3
-8.3
-6.6
-5.4
-4.3
-6.6
-5.2
-60
-2.0
A
A
A
A
A
A
Thermal Characteristics
Characteristic
Symbol
Value
Units
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Total Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient (Note 6)
Thermal Resistance, Junction to Case (Note 6)
Operating and Storage Temperature Range
T A = +25°C
T A = +70°C
Steady state
t<5s
T A = +25°C
T A = +70°C
Steady state
t<5s
Steady state
P D
R θ JA
P D
R θ JA
R θ JC
T J, T STG
0.8
1.2
160
104
2.0
2.9
63
42
10.8
-55 to +150
W
°C/W
W
°C/W
°C/W
°C
Electrical Characteristics (@T A = +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
BV DSS
I DSS
I GSS
-25
?
?
?
?
?
?
-1
± 10
V
μA
μA
V GS = 0V, I D = -250μA
V DS = -25V, V GS = 0V
V GS = ± 8.0V, V DS = 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
V GS(th)
-0.4
?
-1.0
V
V DS = V GS , I D = -250μA
?
20
27
V GS = -4.5V, I D = -6.4A
Static Drain-Source On-Resistance
R DS (ON)
?
?
24
28
34
40
m Ω
V GS = -2.5V, I D = -4.8A
V GS = -1.8V, I D = -2.5A
?
33
70
V GS = -1.5V, I D = -1.5A
Forward Transfer Admittance
Diode Forward Voltage
|Y fs |
V SD
?
?
16
-0.7
?
-1.0
S
V
V DS = -5V, I D = -4A
V GS = 0V, I S = -1A
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge (V GS = -4.5V)
Total Gate Charge (V GS = -8V
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
C iss
C oss
C rss
R g
Q g
Q g
Q gs
Q gd
t D(on)
t r
t D(off)
t f
?
?
?
?
?
?
?
?
?
?
?
?
2530
203
177
9.1
28.2
48.7
3.2
5.0
15.1
23.5
137.6
80.5
?
?
?
?
?
?
?
?
?
?
?
?
pF
pF
pF
Ω
nC
nC
nC
nC
ns
ns
ns
ns
V DS = -15V, V GS = 0V
f = 1.0MHz
V DS = 0V, V GS = 0V, f = 1.0MHz
V DS = -15V, I D = -4.0A
V DD = -15V, V GS = -4.5V, R G = 1 ? ,
I D = -4.0A
Notes:
5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate
7. Short duration pulse test used to minimize self-heating effect
8. Guaranteed by design. Not subject to production testing.
DMP2039UFDE
Document number: DS35420 Rev. 5 - 2
2 of 6
www.diodes.com
July 2012
? Diodes Incorporated
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