参数资料
型号: DMP2039UFDE-7
厂商: Diodes Inc
文件页数: 3/6页
文件大小: 0K
描述: MOSF P CH 25V 6.7A U-DFN2020-6E
标准包装: 1
FET 型: MOSFET P 通道,金属氧化物
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 25V
电流 - 连续漏极(Id) @ 25° C: 6.7A
开态Rds(最大)@ Id, Vgs @ 25° C: 27 毫欧 @ 6.4A,4.5V
Id 时的 Vgs(th)(最大): 1V @ 250µA
闸电荷(Qg) @ Vgs: 48.7nC @ 8V
输入电容 (Ciss) @ Vds: 2530pF @ 15V
功率 - 最大: 800mW
安装类型: 表面贴装
封装/外壳: 6-XDFN
供应商设备封装: *
包装: 标准包装
其它名称: DMP2039UFDE-7DIDKR
DMP2039UFDE
20
V GS = 8.0V
20
V GS = 4.5V
V DS = -5.0V
16
V GS = 2.5V
15
V GS = 2.0V
V GS = 1.5V
12
V GS = 1.8V
10
8
4
V GS = 1.2V
5
T A = 150 ° C
T A = 125 ° C
T A = 85 ° C
T A = 25 ° C
0
0
1 2 3 4
5
0
0
T A = -55 ° C
0.5 1.0 1.5 2.0 2.5
3.0
0.06
0.05
-V DS , DRAIN -SOURCE VOLTAGE(V)
Fig. 1 Typical Output Characteristics
0.04
-V GS , GATE-SOURCE VOLTAGE (V)
Fig. 2 Typical Transfer Characteristics
V GS = -4.5V
0.04
0.03
T A = 150 ° C
T A = 125 ° C
T A = 85 ° C
0.03
0.02
0.02
T A = 25 ° C
T A = -55 ° C
0.01
0.01
0
1
2
3 4 5 6 7 8
9
10
0
0
4 8 12 16
20
1.7
1.5
-I D , DRAIN SOURCE CURRENT
Fig. 3 Typical On-Resistance vs.
Drain Current and Gate Voltage
0.06
0.05
-I D , DRAIN SOURCE CURRENT (A)
Fig. 4 Typical On-Resistance vs.
Drain Current and Temperature
1.3
1.1
0.9
0.7
0.04
0.03
0.02
0.01
V GS = -2. 5V
I D = -5 A
V GS = -4.5V
I D = -10 A
0.5
-50
-25 0 25 50 75 100 125 150
T J , JUNCTION TEMPERATURE ( ° C)
0
-50
-25 0 25 50 75 100 125 150
T J , JUNCTION TEMPERATURE ( ° C)
Fig. 5 On-Resistance Variation with Temperature
Fig. 6 On-Resistance Variation with Temperature
DMP2039UFDE
Document number: DS35420 Rev. 5 - 2
3 of 6
www.diodes.com
July 2012
? Diodes Incorporated
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