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| 型号： | DMP2066LSS-13 |
| 厂商： | Diodes Inc |
| 文件页数： | 2/5页 |
| 文件大小： | 0K |
| 描述： | MOSFET P-CH 20V 6.5A 8-SOIC |
| 产品目录绘图： | DMN Series Top DMN Series Side 1 DMN Series Side 2 |
| 标准包装： | 1 |
| FET 型： | MOSFET P 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 20V |
| 电流 - 连续漏极(Id) @ 25° C： | 6.5A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 40 毫欧 @ 5.8A，4.5V |
| Id 时的 Vgs(th)（最大）： | 1.2V @ 250µA |
| 输入电容 (Ciss) @ Vds： | 820pF @ 15V |
| 功率 - 最大： | 2.5W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SOP |
| 包装： | 标准包装 |
| 产品目录页面： | 1578 (CN2011-ZH PDF) |
| 其它名称： | DMP2066LSSDIDKR |
DMP2066LSS
Maximum Ratings (@T A = +25°C, unless otherwise specified.)
Drain-Source Voltage
Gate-Source Voltage
Characteristic
Symbol
V DSS
V GSS
Value
-20
± 12
Units
V
V
Drain Current (Note 5)
Steady
State
T A = +25°C
T A = +70°C
I D
-6.5
-5.2
A
Pulsed Drain Current (10 μ s pulse, duty cycle = 1%)
I DM
-26
A
Thermal Characteristics
Characteristic
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Operating and Storage Temperature Range
Symbol
P D
R θ JA
T J, T STG
Value
2.5
50
-55 to +150
Unit
W
°C/W
°C
Electrical Characteristics (@T A = +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
BV DSS
I DSS
I GSS
-20
?
?
?
?
?
?
-1
± 100
V
μ A
nA
V GS = 0V, I D = -250 μ A
V DS = -20V, V GS = 0V
V GS = ± 12V, V DS = 0V
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
V GS(th)
R DS (ON)
g fs
V SD
-0.6
?
?
?
-0.5
?
?
?
9
-0.72
-1.2
40
70
?
-1.4
V
m ?
S
V
V DS = V GS , I D = -250 μ A
V GS = -4.5V, I D = -5.8A
V GS = -2.5V, I D = -3.8A
V DS = -10V, I D = -4.6A
V GS = 0V, I S = -2.1A
DYNAMIC CHARACTERISTICS (Note 7)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
C iss
C oss
C rss
R g
Q g
Q gs
Q gd
t D(on)
t r
t D(off)
t f
?
?
?
?
?
?
?
?
?
?
?
820
200
160
10.4
14.4
2.6
2.7
13.7
14.0
79.1
35.5
?
?
?
?
?
?
?
?
?
?
?
pF
pF
pF
?
nC
ns
V DS = -15V, V GS = 0V
f = 1.0MHz
V DS = 0V, V GS = 0V,
f = 1.0MHz
V DS = -10V, V GS = -4.5V
I D = -4.5A
V DD = -10V, V GS = -4.5V,
R G = 6 ? , R L = 10 ? , I D = -1A
Notes:
5. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
6. Short duration pulse test used to minimize self-heating effect.
7. Guaranteed by design. Not subject to product testing.
DMP2066LSS
Document number: DS31522 Rev. 3 - 2
2 of 5
www.diodes.com
November 2013
? Diodes Incorporated
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