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| 型号： | DMP2070UCB6-7 |
| 厂商： | Diodes Inc |
| 文件页数： | 2/6页 |
| 文件大小： | 0K |
| 描述： | MOSFET P-CH 20V 2.5A U-WLB1510-6 |
| 标准包装： | 1 |
| FET 型： | MOSFET P 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 20V |
| 电流 - 连续漏极(Id) @ 25° C： | 2.5A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 70 毫欧 @ 1A，4.5V |
| Id 时的 Vgs(th)（最大）： | 1V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 2.9nc @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 210pF @ 10V |
| 功率 - 最大： | 920mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 6-VFBGA，WLBGA |
| 供应商设备封装： | U-WLB1510-6 |
| 包装： | 标准包装 |
| 其它名称： | DMP2070UCB6-7DIDKR |
DMP2070UCB6
Maximum Ratings @T A = 25°C unless otherwise specified
Drain-Source Voltage
Gate-Source Voltage
Characteristic
Symbol
V DSS
V GSS
Value
-20
±8
Units
V
V
Continuous Drain Current (Note 4) V GS = -4.5V
Continuous Drain Current (Note 5) V GS = -4.5V
Steady
State
Steady
State
T A = 25 ° C
T A = 70 ° C
T A = 25 ° C
T A = 70 ° C
I D
I D
-2.5
-2.0
-3.5
-2.8
A
A
Pulsed Drain Current (Note 6)
Maximum Continuous Body Diode Forward Current (Note 5)
I DM
I S
-12
-1.8
A
A
Thermal Characteristics @T A = 25°C unless otherwise specified
Characteristic
Total Power Dissipation (Note 4)
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 4)
Thermal Resistance, Junction to Ambient (Note 5)
Operating and Storage Temperature Range
Symbol
P D
P D
R θ JA
R θ JA
T J, T STG
Value
0.92
1.47
136
84
-55 to +150
Units
W
W
°C/W
°C/W
°C
Electrical Characteristics @T A = 25°C unless otherwise specified
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
BV DSS
-20
-
-
V
V GS = 0V, I D = -250 μ A
Zero Gate Voltage Drain Current
Gate-Source Leakage
@T C = 25°C
I DSS
I GSS
-
-
-
-
-1
±100
μ A
nA
V DS = -16V, V GS = 0V
V GS = ±8V, V DS = 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
V GS(th)
-0.4
-0.6
-1.0
V
V DS = V GS , I D = -250 μ A
55
70
V GS = -4.5V, I D = - 1A
Static Drain-Source On-Resistance
R DS (ON)
-
70
90
90
110
m Ω
V GS = -2.5V, I D = -1A
V GS = -1.8V, I D = -1A
110
150
V GS = -1.5V, I D = -1A
Forward Transfer Admittance
Diode Forward Voltage (Note 5)
|Y fs |
V SD
-
-
12
-0.7
-
-1
S
V
V DS = -10V, I D = -1A
V GS = 0V, I S = -1A
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Series Gate Resistance
Total Gate Charge (4.5V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
C iss
C oss
C rss
R G
Q g
Q gs
Q gd
t D(on)
t r
t D(off)
t f
-
-
-
-
-
-
-
-
-
-
210
92
38
5.3
2.9
0.3
0.5
7.3
14.0
42.6
32
-
-
-
-
-
-
-
-
-
-
-
pF
pF
pF
Ω
nC
nC
nC
ns
ns
ns
ns
V DS = -10V, V GS = 0V,
f = 1.0MHz
V DS = 0V, V GS = 0V, f = 1MHz
V GS = -4.5V, V DS = -10V,
I D = -1A ,
V DD = -10V, V GS = -4.5V,
I DS = -1A, R G = 20 ? ,
Notes:
4. Device mounted on FR-4 PCB with minimum recommended pad layout.
5. Device mounted on FR4 material with 1-inch 2 (6.45-cm 2 ), 2-oz. (0.071-mm thick) Cu
6 300ms pulse, pulse duty cycle ≤ 2%
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to production testing.
DMP2070UCB6
Document number: DS35553 Rev. 2 - 2
2 of 6
www.diodes.com
October 2011
? Diodes Incorporated
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