参数资料
型号: DMP4050SSS-13
厂商: Diodes Inc
文件页数: 2/8页
文件大小: 0K
描述: MOSFET P-CH 40V 4.4A SO8
标准包装: 1
FET 型: MOSFET P 通道,金属氧化物
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 40V
电流 - 连续漏极(Id) @ 25° C: 4.4A
开态Rds(最大)@ Id, Vgs @ 25° C: 50 毫欧 @ 6A,10V
Id 时的 Vgs(th)(最大): 3V @ 250µA
闸电荷(Qg) @ Vgs: 13.9nC @ 10V
输入电容 (Ciss) @ Vds: 674pF @ 20V
功率 - 最大: 1.56W
安装类型: 表面贴装
封装/外壳: 8-SOIC(0.154",3.90mm 宽)
供应商设备封装: 8-SO
包装: 标准包装
产品目录页面: 1473 (CN2011-ZH PDF)
其它名称: DMP4050SSS-13DKR
A Product Line of
Diodes Incorporated
DMP4050SSS
Maximum Ratings
@T A = 25°C unless otherwise specified
Drain-Source voltage
Characteristic
Symbol
V DSS
Value
-40
Unit
V
Gate-Source voltage
(Note 2)
V GS
± 20
V
(Note 4)
-6.0
Continuous Drain current
V GS = 10V
T A = 70°C (Note 4)
I D
-4.8
A
(Note 3)
-4.4
Pulsed Drain current
V GS = 10V
(Note 5)
I DM
-27.0
A
Continuous Source current (Body diode)
Pulsed Source current (Body diode)
(Note 4)
(Note 5)
I S
I SM
-4.0
-27.0
A
A
Thermal Characteristics @T A = 25°C unless otherwise specified
Characteristic
Symbol
Value
Unit
Power dissipation
Linear derating factor
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Lead
Operating and storage temperature range
(Note 3)
(Note 4)
(Note 3)
(Note 4)
(Note 6)
P D
R θ JA
R θ JL
T J , T STG
1.56
12.5
2.8
22.5
80
44.5
35
-55 to 150
W
mW/ ° C
° C/W
° C
Notes:
2. AEC-Q101 V GS maximum is ± 16V.
3. For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device is
measured when operating in a steady-state condition.
4. Same as note (3), except the device is measured at t ≤ 10 sec.
5. Same as note (3), except the device is pulsed with D= 0.02 and pulse width 300 μs. The pulse current is limited by the maximum junction temperature.
6. Thermal resistance from junction to solder-point (at the end of the drain lead).
DMP4050SSS
Document Number DS32108 Rev 1 - 2
2 of 8
www.diodes.com
March 2010
? Diodes Incorporated
相关PDF资料
PDF描述
DMP4051LK3-13 MOSFET P-CH 40V 7.2A DPAK
DMP57D5UFB-7 MOSFET P-CH 50V 200MA 3-DFN
DMP58D0LFB-7B MOSFET P-CH 50V 180MA 3-DFN
DMP58D0SV-7 MOSFET P-CH 50V 160MA SOT-563
DMS2120LFWB-7 MOSFET P-CH 20V 2.9A 8DFN
相关代理商/技术参数
参数描述
DMP4051LK3 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:40V P-CHANNEL ENHANCEMENT MODE MOSFET
DMP4051LK3_10 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:40V P-CHANNEL ENHANCEMENT MODE MOSFET
DMP4051LK3-13 功能描述:MOSFET ENHANCE MODE MOSFET 40V P-CHANNEL RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
DMP5530 制造商:TAPESWITCH CORP 功能描述:Mat, Safety, Diamond Plate Aluminum, 55X30
DMP56D0UV-7 制造商:Diodes Incorporated 功能描述:MOSFET BVDSS: 41V-60V SOT563 T&R 3K - Tape and Reel 制造商:Diodes Incorporated 功能描述:MOSF P CH 50V 160MA SOT563