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| 型号： | DMS2120LFWB-7 |
| 厂商： | Diodes Inc |
| 文件页数： | 1/7页 |
| 文件大小： | 0K |
| 描述： | MOSFET P-CH 20V 2.9A 8DFN |
| 产品目录绘图： | P-Channel DFN |
| 标准包装： | 1 |
| FET 型： | MOSFET P 通道，金属氧化物 |
| FET 特点： | 二极管（隔离式） |
| 漏极至源极电压(Vdss)： | 20V |
| 电流 - 连续漏极(Id) @ 25° C： | 2.9A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 95 毫欧 @ 2.8A，4.5V |
| Id 时的 Vgs(th)（最大）： | 1.3V @ 250µA |
| 输入电容 (Ciss) @ Vds： | 632pF @ 10V |
| 功率 - 最大： | 1.5W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-VDFN 裸露焊盘 |
| 供应商设备封装： | 8-DFN3020B（3x2） |
| 包装： | 标准包装 |
| 产品目录页面： | 1578 (CN2011-ZH PDF) |
| 其它名称： | DMS2120LFWB-7DIDKR |
DMS2120LFWB
P-CHANNEL ENHANCEMENT MODE MOSFET WITH INTEGRATED SBR ?
SUPER BARRIER RECTIFIER
Features
Mechanical Data
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Low On-Resistance
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Case: U-DFN3020-8 Type B
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95m Ω @V GS = -4.5V
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Case Material: Molded Plastic, “Green” Molding Compound. UL
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?
?
?
?
?
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? 120m Ω @V GS = -2.5V
? 150m Ω (typ) @V GS = -1.8V
Low Gate Threshold Voltage, -1.3V Max
Fast Switching Speed
Low Input/Output Leakage
Incorporates Low V F Super Barrier Rectifier (SBR)
Low Profile, 0.5mm Max Height
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
U-DFN3020-8
Type B
G
?
?
?
?
Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Diagram
Terminals: Finish – NiPdAu annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208 e4
Weight: 0.011 grams (approximate)
S
K
A
K
A
K
D
S
D
G
A
D
Top View
Bottom View
Equivalent Circuit
Bottom View
Pin Configuration
Ordering Information (Note 4)
Part Number
DMS2120LFWB-7
Case
DFN3020B-8
Packaging
3000/Tape & Reel
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. ?
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com.
Marking Information
MF = Product Type Marking Code
MF YM
YM = Date Code Marking
Y = Year (ex: V = 2008)
M = Month (ex: 9 = September)
Date Code Key
Year
Code
2008
V
2009
W
2010
X
2011
Y
2012
Z
2013
A
2014
B
2015
C
2016
D
2017
E
Month
Code
Jan
1
Feb
2
Mar
3
Apr
4
May
5
Jun
6
Jul
7
Aug
8
Sep
9
Oct
O
Nov
N
Dec
D
SBR is a registered trademark of Diodes Incorporated.
DMS2120LFWB
Document number: DS31667 Rev. 5 - 2
1 of 7
www.diodes.com
September 2012
? Diodes Incorporated
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相关代理商/技术参数 |
参数描述 |
|---|---|
| DMS2220LFDB | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:P-CHANNEL ENHANCEMENT MODE MOSFET WITH INTEGRATED SBR? SUPER BARRIER RECTIFIER |
| DMS2220LFDB-7 | 功能描述:MOSFET 20V 3.5A P-CHNL RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| DMS2220LFW | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:P-CHANNEL ENHANCEMENT MODE MOSFET WITH INTEGRATED SBR |
| DMS2220LFW-7 | 功能描述:MOSFET 20V 2.9A P-CHNL RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| DMS-2-250 | 制造商:MERRIMAC 制造商全称:MERRIMAC 功能描述:DOUBLE BALANCED MIXER |
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