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| 型号： | DMS2120LFWB-7 |
| 厂商： | Diodes Inc |
| 文件页数： | 2/7页 |
| 文件大小： | 0K |
| 描述： | MOSFET P-CH 20V 2.9A 8DFN |
| 产品目录绘图： | P-Channel DFN |
| 标准包装： | 1 |
| FET 型： | MOSFET P 通道，金属氧化物 |
| FET 特点： | 二极管（隔离式） |
| 漏极至源极电压(Vdss)： | 20V |
| 电流 - 连续漏极(Id) @ 25° C： | 2.9A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 95 毫欧 @ 2.8A，4.5V |
| Id 时的 Vgs(th)（最大）： | 1.3V @ 250µA |
| 输入电容 (Ciss) @ Vds： | 632pF @ 10V |
| 功率 - 最大： | 1.5W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-VDFN 裸露焊盘 |
| 供应商设备封装： | 8-DFN3020B（3x2） |
| 包装： | 标准包装 |
| 产品目录页面： | 1578 (CN2011-ZH PDF) |
| 其它名称： | DMS2120LFWB-7DIDKR |
DMS2120LFWB
Maximum Ratings – TOTAL DEVICE (@T A = +25°C, unless otherwise specified.)
Characteristic
Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
Symbol
P D
R θ JA
T J , T STG
Value
1.5
85
-55 to +150
Unit
W
° C/W
° C
Maximum Ratings – P-CHANNEL MOSFET – Q1 (@T A = +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Gate-Source Voltage
Drain Current (Note 5)
Pulsed Drain Current (Note 6)
Symbol
V DSS
V GSS
I D
I DM
Value
-20
±12
-2.9
-10
Units
V
V
A
A
Maximum Ratings – SBR – D1 (@T A = +25°C, unless otherwise specified.)
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectified Output Current
Non-Repetitive Peak Forward Surge Current
8.3ms single half sine-wave superimposed on rated load
Symbol
V RRM
V RWM
V R
V R(RMS)
I O
I FSM
Value
20
14
1
3
Unit
V
V
A
A
Electrical Characteristics – P-CHANNEL MOSFET – Q1 (@T A = +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
BV DSS
I DSS
I GSS
-20
?
?
?
?
?
?
?
?
-1
± 100
± 800
V
μ A
nA
V GS = 0V, I D = -250 μ A
V DS = -20V, V GS = 0V
V GS = ± 8V, V DS = 0V
V GS = ± 12V, V DS = 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage (Note 7)
V GS(th)
R DS (ON)
|Y fs |
V SD
-0.45
?
?
?
?
?
?
70
84
100
8
0.42
-1.3
95
120
150
?
-1.2
V
m Ω
S
V
V DS = V GS , I D = -250 μ A
V GS = -4.5V, I D = -2.8A
V GS = -2.5V, I D = -2.0A
V GS = -1.8V, I D = -1.0A
V DS = -5V, I D = -2.8A
V GS = 0V, I S = -1.0A
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
C iss
C oss
C rss
?
?
?
632
65
54
?
?
?
pF
pF
pF
V DS = -10V, V GS = 0V
f = 1.0MHz
Electrical Characteristics – SBR – D1 (@T A = +25°C, unless otherwise specified.)
Characteristic
Reverse Breakdown Voltage (Note 7)
Forward Voltage
Reverse Current (Note 7)
Symbol
V (BR)R
V F
I R
Min
20
?
?
?
Typ
?
?
?
?
Max
?
0.45
0.52
80
Unit
V
V
μ A
I R = 1mA
I F = 0.5A
I F = 1.0A
V R = 20V
Test Condition
Notes:
5. Device mounted on FR-4 PCB, on minimum recommended, 2oz Copper pad layout.
6. Repetitive rating, pulse width limited by junction temperature.
7. Short duration pulse test used to minimize self-heating effect.
SBR is a registered trademark of Diodes Incorporated.
DMS2120LFWB
Document number: DS31667 Rev. 5 - 2
2 of 7
www.diodes.com
September 2012
? Diodes Incorporated
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