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| 型号： | DMP4050SSS-13 |
| 厂商： | Diodes Inc |
| 文件页数： | 4/8页 |
| 文件大小： | 0K |
| 描述： | MOSFET P-CH 40V 4.4A SO8 |
| 标准包装： | 1 |
| FET 型： | MOSFET P 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 40V |
| 电流 - 连续漏极(Id) @ 25° C： | 4.4A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 50 毫欧 @ 6A，10V |
| Id 时的 Vgs(th)（最大）： | 3V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 13.9nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 674pF @ 20V |
| 功率 - 最大： | 1.56W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SO |
| 包装： | 标准包装 |
| 产品目录页面： | 1473 (CN2011-ZH PDF) |
| 其它名称： | DMP4050SSS-13DKR |
A Product Line of
Diodes Incorporated
DMP4050SSS
Electrical Characteristics @T A = 25°C unless otherwise specified
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
BV DSS
I DSS
I GSS
-40
?
?
?
?
?
?
-0.5
± 100
V
μ A
nA
I D = -250 μ A, V GS = 0V
V DS = -40V, V GS = 0V
V GS = ± 20V, V DS = 0V
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-Resistance (Note 7)
Forward Transconductance (Notes 7 & 8)
Diode Forward Voltage (Note 7)
Reverse recovery time (Note 8)
Reverse recovery charge (Note 8)
V GS(th)
R DS (ON)
g fs
V SD
t rr
Q rr
-1.0
?
?
?
?
?
0.038
0.055
14
-0.86
18.5
15.6
-3.0
0.050
0.079
?
-1.2
?
?
V
?
S
V
ns
nC
I D = -250 μ A, V DS = V GS
V GS = -10V, I D = -6A
V GS = -4.5V, I D = -5A
V DS = -15V, I D = -6A
I S = -6A, V GS = 0V
I S = -2.5, di/dt= 100A/ μ s
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge (Note 9)
Total Gate Charge (Note 9)
C iss
C oss
C rss
Q g
Q g
?
?
?
?
?
674
115
67.7
6.9
13.9
?
?
?
?
?
pF
pF
pF
nC
nC
V DS = -20V, V GS = 0V
f= 1MHz
V GS = -4.5V
V DS = -20V
Gate-Source Charge (Note 9)
Gate-Drain Charge (Note 9)
Turn-On Delay Time (Note 9)
Q gs
Q gd
t D(on)
?
?
?
2
3.4
1.9
?
?
?
nC
nC
ns
V GS = -10V
I D = -6A
Turn-On Rise Time (Note 9)
Turn-Off Delay Time (Note 9)
Turn-Off Fall Time (Note 9)
t r
t D(off)
t f
?
?
?
3.1
31.5
12.6
?
?
?
ns
ns
ns
V DD = -20V, V GS = -10V
I D = -1A, R G ? 6.0 Ω
Notes:
7. Measured under pulsed conditions. Pulse width ≤ 300 μ s; duty cycle ≤ 2%
8. For design aid only, not subject to production testing.
9. Switching characteristics are independent of operating junction temperatures.
DMP4050SSS
Document Number DS32108 Rev 1 - 2
4 of 8
www.diodes.com
March 2010
? Diodes Incorporated
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