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参数资料
| 型号： | DS1220AB |
| 厂商： | MAXIM INTEGRATED PRODUCTS INC |
| 元件分类： | DRAM |
| 英文描述： | 16K Nonvolatile SRAM(16K非易失性SRAM) |
| 中文描述： | 2K X 8 NON-VOLATILE SRAM MODULE, 200 ns, PDIP24 |
| 封装： | 0.720 INCH, PLASTIC, DIP-24 |
| 文件页数： | 7/9页 |
| 文件大小： | 90K |
| 代理商： | DS1220AB |
DS1220AB/AD
021998 7/10
POWER–DOWN/POWER–UP CONDITION
3.2V
DATA RETENTION TIME
V
CC
t
F
t
PD
t
R
t
REC
CE
t
DR
LEAKAGE CURRENT
I
SUPPLIED FROM
LITHIUM CELL
V
TP
SEE NOTE 11
POWER–DOWN/POWER–UP TIMING
(t
A:
See Note 10)
UNITS
PARAMETER
SYMBOL
MIN
TYP
MAX
NOTES
CE at V
IH
before Power–Down
t
PD
0
μ
s
11
V
CC
slew from V
TP
to 0V
t
F
300
μ
s
V
CC
slew from 0V to V
TP
t
R
300
μ
s
CE at V
IH
after Power–Up
t
REC
2
125
ms
(t
A
=25
°
C)
NOTES
PARAMETER
SYMBOL
MIN
TYP
MAX
UNITS
Expected Data Retention Time
t
DR
10
years
9
WARNING:
Under no circumstances are negative undershoots, of any amplitude, allowed when device is in the battery backup
mode.
NOTES:
1. WE is high for a read cycle.
2. OE = V
IH
or V
IL
.
If OE = V
IH
during write cycle, the output buffers remain in a high impedance state.
3. t
WP
is specified as the logical AND of CE and WE. t
WP
is measured from the latter of CE or WE going low to the
earlier of CE or WE going high.
4. t
DS
is measured from the earlier of CE or WE going high.
5. These parameters are sampled with a 5 pF load and are not 100% tested.
6. If the CE low transition occurs simultaneously with or later than the WE low transition, the output buffers remain
in a high impedance state during this period.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| DS1220AB/AD | 制造商:未知厂家 制造商全称:未知厂家 功能描述:16k Nonvolatile SRAM |
| DS1220AB_10 | 制造商:DALLAS 制造商全称:Dallas Semiconductor 功能描述:16k Nonvolatile SRAM |
| DS1220AB-100 | 功能描述:NVRAM RoHS:否 制造商:Maxim Integrated 数据总线宽度:8 bit 存储容量:1024 Kbit 组织:128 K x 8 接口类型:Parallel 访问时间:70 ns 电源电压-最大:5.5 V 电源电压-最小:4.5 V 工作电流:85 mA 最大工作温度:+ 70 C 最小工作温度:0 C 封装 / 箱体:EDIP 封装:Tube |
| DS1220AB-100+ | 功能描述:NVRAM 16k Nonvolatile SRAM RoHS:否 制造商:Maxim Integrated 数据总线宽度:8 bit 存储容量:1024 Kbit 组织:128 K x 8 接口类型:Parallel 访问时间:70 ns 电源电压-最大:5.5 V 电源电压-最小:4.5 V 工作电流:85 mA 最大工作温度:+ 70 C 最小工作温度:0 C 封装 / 箱体:EDIP 封装:Tube |
| DS1220AB-100IND | 功能描述:NVRAM RoHS:否 制造商:Maxim Integrated 数据总线宽度:8 bit 存储容量:1024 Kbit 组织:128 K x 8 接口类型:Parallel 访问时间:70 ns 电源电压-最大:5.5 V 电源电压-最小:4.5 V 工作电流:85 mA 最大工作温度:+ 70 C 最小工作温度:0 C 封装 / 箱体:EDIP 封装:Tube |
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