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参数资料
| 型号： | DS1221 |
| 厂商： | DALLAS SEMICONDUCTOR |
| 元件分类： | 电源管理 |
| 英文描述： | Nonvolatile Controller x 4 Chip(非易失性控制器x 4芯片) |
| 中文描述： | 3-CHANNEL POWER SUPPLY MANAGEMENT CKT, PDIP16 |
| 封装： | 0.300 INCH, DIP-16 |
| 文件页数： | 1/8页 |
| 文件大小： | 102K |
| 代理商： | DS1221 |
DS1221
Nonvolatile Controller x 4 Chip
DS1221
072498 1/8
FEATURES
Converts CMOS RAMs into nonvolatile memories
Data is automatically protected during power loss
2–to–4 decoder provides for up to 4 CMOS RAMs
Provides for redundant batteries
Test battery condition on power–up
Full
±
10% operating range
Unauthorized access can be prevented with optional
security feature
16–pin 0.3–inch DIP saves PC board space
Optional 16–pin SOIC surface mount package
Optional industrial temperature range of
–40
°
C to +85
°
C available
PIN ASSIGNMENT
A
B
GND
*D/Q
VCCI
VBAT2
CE
CE0
CE1
CE2
CE3
*WE
*RD
*RST
VBAT1
VCC0
*D/Q
VCCI
VBAT2
CE
CE0
CE1
CE2
CE3
A
B
GND
*WE
*RD
*RST
VBAT1
VCCO
DS1221 16–PIN DIP (300 MIL)
See Mech. Drawings
Section
DS1221 16–PIN SOIC (300 MIL)
See Mech. Drawings
Section
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
PIN DESCRIPTION
A, B
CE
CE0 – CE3
V
BAT1
V
BAT2
*RST
V
CCI
V
CCO
*RD
*WE
*D/Q
– Address Inputs
– Chip Enable Input
– Chip Enable Outputs
– + Battery 1
– + Battery 2
– Reset
– +5V Supply
– RAM Supply
– Read Input
– Write Input
– Data Input/Output
*Used with optional security circuit only and must be
connected to ground in all other cases.
DESCRIPTION
The DS1221 Nonvolatile Controller x 4 Chip is a CMOS
circuit which solves the application problem of convert-
ing CMOS RAMs into nonvolatile memories. Incoming
power is monitored for an out–of–tolerance condition.
When such a condition is detected , the chip enable out-
puts are inhibited to accomplish write protection and the
battery is switched on to supply RAMs with uninter-
rupted power. An optional security code prevents unau-
thorized users from obtaining access to the memory
space. The nonvolatile controller/decoder circuitry uses
a low–leakage CMOS process which affords precise
voltage detection at extremely low battery consumption.
By combining the DS1221 with up to four CMOS memo-
ries and lithium batteries, nonvolatile operation can be
achieved.
相关PDF资料 |
PDF描述 |
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| DS1225AB | 64K Nonvolatile SRAM(64K非易失性静态RAM) |
| DS1225AD | 16K Nonvolatile SRAM(64K非易失性SRAM) |
| DS1225Y | 64K Nonvolatile SRAM(64K 非易失性静态RAM) |
| DS1230AB(中文) | 256K NV SRAM(256K非易失性SRAM) |
相关代理商/技术参数 |
参数描述 |
|---|---|
| DS1221S | 功能描述:IC CTRLR/DECODER 4BIT 16-SOIC RoHS:否 类别:集成电路 (IC) >> 存储器 - 控制器 系列:- 标准包装:45 系列:- 控制器类型:静态 RAM（SRAM） 电源电压:4.5 V ~ 5.5 V 工作温度:0°C ~ 70°C 封装/外壳:16-SOIC（0.295"，7.50mm 宽） 供应商设备封装:16-SOIC W 包装:管件 |
| DS1221S/T&R | 制造商:Rochester Electronics LLC 功能描述: 制造商:Maxim Integrated Products 功能描述: |
| DS1221S/T&R | 功能描述:NVRAM RoHS:否 制造商:Maxim Integrated 数据总线宽度:8 bit 存储容量:1024 Kbit 组织:128 K x 8 接口类型:Parallel 访问时间:70 ns 电源电压-最大:5.5 V 电源电压-最小:4.5 V 工作电流:85 mA 最大工作温度:+ 70 C 最小工作温度:0 C 封装 / 箱体:EDIP 封装:Tube |
| DS1221SN | 功能描述:IC CTRLR/DECODER 4BIT IN 16-SOIC RoHS:否 类别:集成电路 (IC) >> 存储器 - 控制器 系列:- 标准包装:45 系列:- 控制器类型:静态 RAM（SRAM） 电源电压:4.5 V ~ 5.5 V 工作温度:0°C ~ 70°C 封装/外壳:16-SOIC（0.295"，7.50mm 宽） 供应商设备封装:16-SOIC W 包装:管件 |
| DS1222 | 功能描述:IC BANKSWITCH CMOS 14-DIP RoHS:否 类别:集成电路 (IC) >> 存储器 - 控制器 系列:- 标准包装:45 系列:- 控制器类型:静态 RAM（SRAM） 电源电压:4.5 V ~ 5.5 V 工作温度:0°C ~ 70°C 封装/外壳:16-SOIC（0.295"，7.50mm 宽） 供应商设备封装:16-SOIC W 包装:管件 |
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