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参数资料
| 型号： | DS1220AD |
| 厂商： | DALLAS SEMICONDUCTOR |
| 元件分类： | DRAM |
| 英文描述： | 16K Nonvolatile SRAM(16K非易失性SRAM) |
| 中文描述： | 2K X 8 NON-VOLATILE SRAM MODULE, 200 ns, PDIP24 |
| 文件页数： | 2/9页 |
| 文件大小： | 90K |
| 代理商： | DS1220AD |
DS1220AB/AD
021998 2/10
READ MODE
The DS1220AB and DS1220AD execute a read cycle
whenever WE (Write Enable) is inactive (high) and CE
(Chip Enable) and OE (Output Enable) are active (low).
The unique address specified by the 11 address inputs
(A0–A10) defines which of the 2048 bytes of data is to
be accessed. Valid data will be available to the eight
data output drivers within t
ACC
(Access Time) after the
last address input signal is stable, providing that the CE
and OE access times are also satisfied. If CE and OE
access times are not satisfied, then data access must
be measured from the later occurring signal and the lim-
iting parameter is either t
CO
for CE or t
OE
for OE rather
than address access.
WRITE MODE
The DS1220AB and DS1220AD execute a write cycle
whenever the WE and CE signals are active (low) after
address inputs are stable. The latter occurring falling
edge of CE or WE will determine the start of the write
cycle. The write cycle is terminated by the earlier rising
edge of CE or WE. All address inputs must be kept valid
throughout the write cycle. WE must return to the high
state for a minimum recovery time (t
WR
) before another
cycle can be initiated. The OE control signal should be
kept inactive (high) during write cycles to avoid bus con-
tention. However, if the output drivers are enabled (CE
and OE active) then WE will disable the outputs in t
ODW
from its falling edge.
DATA RETENTION MODE
The DS1220AB provides full functional capability for
V
CC
greater than 4.75 volts and write protects by 4.5V.
The DS1220AD provides full functional capability for
V
CC
greater than 4.5 volts and write protects by 4.25V.
Data is maintained in the absence of V
CC
without any
additional support circuitry. The nonvolatile static RAMs
constantly monitor V
CC
. Should the supply voltage
decay, the NV SRAMs automatically write protect them-
selves, all inputs become “don’t care,” and all outputs
become high impedance. As V
CC
falls below approxi-
mately 3.0 volts, a power switching circuit connects the
lithium energy source to RAM to retain data. During
power–up, when V
CC
rises above approximately 3.0
volts, the power switching circuit connects external V
CC
to RAM and disconnects the lithium energy source.
Normal RAM operation can resume after V
CC
exceeds
4.75 volts for the DS1220AB and 4.5 volts for the
DS1220AD.
FRESHNESS SEAL
Each DS1220 device is shipped from Dallas Semicon-
ductor with its lithium energy source disconnected,
guaranteeing full energy capacity. When V
CC
is first
applied at a level of greater than V
TP
, the lithium energy
source is enabled for battery backup operation.
相关PDF资料 |
PDF描述 |
|---|---|
| DS1220Y | 16K Nonvolatile SRAM(16K 非易失性静态RAM) |
| DS1221 | Nonvolatile Controller x 4 Chip(非易失性控制器x 4芯片) |
| DS1222 | BankSwitch Chip(存储器组切换芯片) |
| DS1225AB | 64K Nonvolatile SRAM(64K非易失性静态RAM) |
| DS1225AD | 16K Nonvolatile SRAM(64K非易失性SRAM) |
相关代理商/技术参数 |
参数描述 |
|---|---|
| DS1220AD-100 | 功能描述:NVRAM RoHS:否 制造商:Maxim Integrated 数据总线宽度:8 bit 存储容量:1024 Kbit 组织:128 K x 8 接口类型:Parallel 访问时间:70 ns 电源电压-最大:5.5 V 电源电压-最小:4.5 V 工作电流:85 mA 最大工作温度:+ 70 C 最小工作温度:0 C 封装 / 箱体:EDIP 封装:Tube |
| DS1220AD-100+ | 功能描述:NVRAM 16k Nonvolatile SRAM RoHS:否 制造商:Maxim Integrated 数据总线宽度:8 bit 存储容量:1024 Kbit 组织:128 K x 8 接口类型:Parallel 访问时间:70 ns 电源电压-最大:5.5 V 电源电压-最小:4.5 V 工作电流:85 mA 最大工作温度:+ 70 C 最小工作温度:0 C 封装 / 箱体:EDIP 封装:Tube |
| DS1220AD-100IND | 功能描述:NVRAM 16k Nonvolatile SRAM RoHS:否 制造商:Maxim Integrated 数据总线宽度:8 bit 存储容量:1024 Kbit 组织:128 K x 8 接口类型:Parallel 访问时间:70 ns 电源电压-最大:5.5 V 电源电压-最小:4.5 V 工作电流:85 mA 最大工作温度:+ 70 C 最小工作温度:0 C 封装 / 箱体:EDIP 封装:Tube |
| DS1220AD-100-IND | 制造商:DALLAS 制造商全称:Dallas Semiconductor 功能描述:16k Nonvolatile SRAM |
| DS1220AD-100IND+ | 功能描述:NVRAM 16k Nonvolatile SRAM RoHS:否 制造商:Maxim Integrated 数据总线宽度:8 bit 存储容量:1024 Kbit 组织:128 K x 8 接口类型:Parallel 访问时间:70 ns 电源电压-最大:5.5 V 电源电压-最小:4.5 V 工作电流:85 mA 最大工作温度:+ 70 C 最小工作温度:0 C 封装 / 箱体:EDIP 封装:Tube |
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