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参数资料
| 型号： | DS1220AD |
| 厂商： | DALLAS SEMICONDUCTOR |
| 元件分类： | DRAM |
| 英文描述： | 16K Nonvolatile SRAM(16K非易失性SRAM) |
| 中文描述： | 2K X 8 NON-VOLATILE SRAM MODULE, 200 ns, PDIP24 |
| 文件页数： | 8/9页 |
| 文件大小： | 90K |
| 代理商： | DS1220AD |
DS1220AB/AD
021998 8/10
7. If the CE high transition occurs prior to or simultaneously with the WE high transition, the output buffers remain
in a high impedance state during this period.
8. If WE is low or the WE low transition occurs prior to or simultaneously with the CE low transition, the output buffers
remain in a high impedance state during this period.
9. Each DS1220AB and each DS1220AD has a built-in switch that disconnects the lithium source until V
CC
is first
applied by the user. The expected t
DR
is defined as accumulative time in the absence of V
CC
starting from the
time power is first applied by the user.
10.All AC and DC electrical characteristics are valid over the full operating temperature range. For commercial prod-
ucts, this range is 0
°
C to 70
°
C. For industrial products (IND), this range is –40
°
C to +85
°
C.
11. In a power down condition the voltage on any pin may not exceed the voltage on V
CC
.
12.t
WR1
, t
DH1
are measured from WE going high.
13.t
WR2
, t
DH2
are measured from CE going high.
14.DS1220AB and DS1220AD modules are recognized by Underwriters Laboratory (U.L.
) under file E99151.
DC TEST CONDITIONS
Outputs Open
All Voltages Are Referenced to Ground
AC TEST CONDITIONS
Output Load: 100 pF + 1TTL Gate
Input Pulse Levels: 0 – 3.0V
Timing Measurement Reference Levels
Input: 1.5V
Output: 1.5V
Input Pulse Rise and Fall Times: 5ns
ORDERING INFORMATION
DS1220 TTP– SSS – III
Operating Temperature Range
Blank: 0
°
C to 70
°
C
IND: –40
°
C to +85
°
C
Access
100:
120:
150:
200:
Speed
100 ns
120 ns
150 ns
200 ns
Package Type
Blank: 24–pin 600 mil DIP
V
Tolerance
AB: +5%
AD: +10%
相关PDF资料 |
PDF描述 |
|---|---|
| DS1220Y | 16K Nonvolatile SRAM(16K 非易失性静态RAM) |
| DS1221 | Nonvolatile Controller x 4 Chip(非易失性控制器x 4芯片) |
| DS1222 | BankSwitch Chip(存储器组切换芯片) |
| DS1225AB | 64K Nonvolatile SRAM(64K非易失性静态RAM) |
| DS1225AD | 16K Nonvolatile SRAM(64K非易失性SRAM) |
相关代理商/技术参数 |
参数描述 |
|---|---|
| DS1220AD-100 | 功能描述:NVRAM RoHS:否 制造商:Maxim Integrated 数据总线宽度:8 bit 存储容量:1024 Kbit 组织:128 K x 8 接口类型:Parallel 访问时间:70 ns 电源电压-最大:5.5 V 电源电压-最小:4.5 V 工作电流:85 mA 最大工作温度:+ 70 C 最小工作温度:0 C 封装 / 箱体:EDIP 封装:Tube |
| DS1220AD-100+ | 功能描述:NVRAM 16k Nonvolatile SRAM RoHS:否 制造商:Maxim Integrated 数据总线宽度:8 bit 存储容量:1024 Kbit 组织:128 K x 8 接口类型:Parallel 访问时间:70 ns 电源电压-最大:5.5 V 电源电压-最小:4.5 V 工作电流:85 mA 最大工作温度:+ 70 C 最小工作温度:0 C 封装 / 箱体:EDIP 封装:Tube |
| DS1220AD-100IND | 功能描述:NVRAM 16k Nonvolatile SRAM RoHS:否 制造商:Maxim Integrated 数据总线宽度:8 bit 存储容量:1024 Kbit 组织:128 K x 8 接口类型:Parallel 访问时间:70 ns 电源电压-最大:5.5 V 电源电压-最小:4.5 V 工作电流:85 mA 最大工作温度:+ 70 C 最小工作温度:0 C 封装 / 箱体:EDIP 封装:Tube |
| DS1220AD-100-IND | 制造商:DALLAS 制造商全称:Dallas Semiconductor 功能描述:16k Nonvolatile SRAM |
| DS1220AD-100IND+ | 功能描述:NVRAM 16k Nonvolatile SRAM RoHS:否 制造商:Maxim Integrated 数据总线宽度:8 bit 存储容量:1024 Kbit 组织:128 K x 8 接口类型:Parallel 访问时间:70 ns 电源电压-最大:5.5 V 电源电压-最小:4.5 V 工作电流:85 mA 最大工作温度:+ 70 C 最小工作温度:0 C 封装 / 箱体:EDIP 封装:Tube |
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