参数资料
型号: DS1230AB
厂商: DALLAS SEMICONDUCTOR
元件分类: DRAM
英文描述: 256K NV SRAM(256K非易失性SRAM)
中文描述: 32K X 8 NON-VOLATILE SRAM MODULE, 200 ns, DMA28
文件页数: 11/12页
文件大小: 120K
代理商: DS1230AB
DS1230Y/AB
042398 11/12
DS1230Y/AB NONVOLATILE SRAM, 34–PIN POWERCAP MODULE WITH POWERCAP
PKG
DIM
INCHES
MIN
NOM
MAX
A
0.920
0.925
0.930
B
0.955
0.960
0.965
C
0.240
0.245
0.250
D
0.052
0.055
0.058
E
0.048
0.050
0.052
F
0.015
0.020
0.025
G
0.020
0.025
0.030
TOP VIEW
SIDE VIEW
BOTTOM VIEW: REFERENCE ONLY
COMPONENTS AND PLACEMENTS
MAY DIFFER FROM THOSE SHOWN
ASSEMBLY AND USE
Reflow soldering
Dallas Semiconductor recommends that
PowerCap Module bases experience
one pass through solder reflow oriented
label–side up (live–bug).
Hand soldering and touch–up
Do not touch soldering iron to leads for
more than 3 seconds. To solder, apply
flux to the pad, heat the lead frame pad
and apply solder. To remove part, apply
flux, heat pad until solder reflows, and
use a solder wick.
LPM replacement in a socket
To replace a Low Profile Module in a
68–pin
PLCC
socket,
DS9034PC PowerCap to a module base
then insert the complete module into the
socket one row of leads at a time, push-
ing only on the corners of the cap. Never
apply force to the center of the device.
To remove from a socket, use a PLCC
extraction tool and ensure that it does
not hit or damage any of the module IC
components. Do not use any other tool
for extraction.
attach
a
相关PDF资料
PDF描述
DS1231 Power Monitor Chip(电源监控芯片)
DS1231S Power Monitor Chip(电源监控芯片)
DS1232LP(中文) Low Power MicroMonitor Chip(低功耗微监控芯片)
DS1232LPS(中文) Low Power MicroMonitor Chip(低功耗微监控芯片)
DS1232LP Low Power MicroMonitor Chip(低功耗微监控芯片)
相关代理商/技术参数
参数描述
DS1230AB-100 功能描述:NVRAM RoHS:否 制造商:Maxim Integrated 数据总线宽度:8 bit 存储容量:1024 Kbit 组织:128 K x 8 接口类型:Parallel 访问时间:70 ns 电源电压-最大:5.5 V 电源电压-最小:4.5 V 工作电流:85 mA 最大工作温度:+ 70 C 最小工作温度:0 C 封装 / 箱体:EDIP 封装:Tube
DS1230AB-100+ 功能描述:NVRAM 256k Nonvolatile SRAM RoHS:否 制造商:Maxim Integrated 数据总线宽度:8 bit 存储容量:1024 Kbit 组织:128 K x 8 接口类型:Parallel 访问时间:70 ns 电源电压-最大:5.5 V 电源电压-最小:4.5 V 工作电流:85 mA 最大工作温度:+ 70 C 最小工作温度:0 C 封装 / 箱体:EDIP 封装:Tube
DS1230AB-100IND 制造商:DALLAS 制造商全称:Dallas Semiconductor 功能描述:256k Nonvolatile SRAM
DS1230AB-100-IND 制造商:未知厂家 制造商全称:未知厂家 功能描述:NVRAM (Battery Based)
DS1230AB-120 功能描述:NVRAM 256k Nonvolatile SRAM RoHS:否 制造商:Maxim Integrated 数据总线宽度:8 bit 存储容量:1024 Kbit 组织:128 K x 8 接口类型:Parallel 访问时间:70 ns 电源电压-最大:5.5 V 电源电压-最小:4.5 V 工作电流:85 mA 最大工作温度:+ 70 C 最小工作温度:0 C 封装 / 箱体:EDIP 封装:Tube