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参数资料
| 型号： | DS2422X |
| 厂商： | DALLAS SEMICONDUCTOR |
| 元件分类： | Memory IC:Other |
| 英文描述： | SPECIALTY MEMORY CIRCUIT, UUC |
| 文件页数： | 16/23页 |
| 文件大小： | 146K |
| 代理商： | DS2422X |
DS2422/DS2423
021998 23/23
NOTES:
1. All voltages are referenced to ground.
2. VPUP = external pull–up voltage.
3. Input load is to ground.
4. An additional reset or communication sequence cannot begin until the reset high time has expired.
5. Read data setup time refers to the time the host must pull the 1–Wire bus low to read a bit. Data is guaranteed
to be valid within 1
s of this falling edge.
6. Capacitance on the data pin could be 800 pF when power is first applied. If a 5 k
resistor is used to pull up the
data line to VPUP, 5 s after power has been applied the parasite capacitance will not affect normal communica-
tions.
7. The reset low time (tRSTL) should be restricted to a maximum of 960 s, to allow interrupt signaling, otherwise,
it could mask or conceal interrupt pulses.
8. VIH is a function of the external pull–up resistor and VPUP .
9. Under certain low voltage conditions VILMAX may have to be reduced to as much as 0.5V to always guarantee a
presence pulse.
10. The counter inputs are designed for interfacing to mechanical switches and piezo sensors. If interfacing to digital
circuits, one should use an open–drain driver.
11. A lower impedance pull–up, e. g., for reed switches, can be achieved by connecting an external resistor from the
counter input to VBAT.
12. Read and write scratchpad (all 32 bytes) at VBAT of 3.0 V.
相关PDF资料 |
PDF描述 |
|---|---|
| DS2423P/T&R | SPECIALTY MEMORY CIRCUIT, PDSO6 |
| DS2423P | SPECIALTY MEMORY CIRCUIT, PDSO6 |
| DS2423X | SPECIALTY MEMORY CIRCUIT, UUC |
| DS2423 | 4K X 1 STANDARD SRAM, PDSO6 |
| DS2422 | 1K X 1 STANDARD SRAM, PDSO6 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| DS2423 | 制造商:DALLAS 制造商全称:Dallas Semiconductor 功能描述:4kbit 1-Wire RAM with Counter |
| DS2423D/T&R | 制造商:Maxim Integrated Products 功能描述:IC SRAM 4KBIT 6FLIPCHIP |
| DS2423D/T&R | 功能描述:IC SRAM 4KBIT 6FCHIP RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:150 系列:- 格式 - 存储器:EEPROMs - 串行 存储器类型:EEPROM 存储容量:4K (2 x 256 x 8) 速度:400kHz 接口:I²C，2 线串口 电源电压:2.5 V ~ 5.5 V 工作温度:-40°C ~ 85°C 封装/外壳:8-VFDFN 裸露焊盘 供应商设备封装:8-DFN（2x3） 包装:管件 产品目录页面:1445 (CN2011-ZH PDF) |
| DS2423MRAB0 | 制造商:Thomas & Betts 功能描述:300A,NLT,3P4W,MG,423,3P480V |
| DS2423P | 功能描述:静态随机存取存储器 RoHS:否 制造商:Cypress Semiconductor 存储容量:16 Mbit 组织:1 M x 16 访问时间:55 ns 电源电压-最大:3.6 V 电源电压-最小:2.2 V 最大工作电流:22 uA 最大工作温度:+ 85 C 最小工作温度:- 40 C 安装风格:SMD/SMT 封装 / 箱体:TSOP-48 封装:Tray |
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