参数资料
型号: DSPIC30F4013-30I/ML
厂商: Microchip Technology
文件页数: 93/153页
文件大小: 0K
描述: IC DSPIC MCU/DSP 48K 44QFN
产品培训模块: Serial Communications using dsPIC30F CAN
Serial Communications using dsPIC30F I2C
Serial Communications using dsPIC30F SPI
Serial Communications using dsPIC30F UART
dsPIC30F 12 bit ADC - Part 2
dsPIC30F Addressing Modes - Part 1
dsPIC30F Architecture - Part 1
dsPIC30F DSP Engine & ALU
dsPIC30F Interrupts
dsPIC30F Motor Control PWM
dsPIC Timers
Asynchronous Stimulus
dsPIC30F Addressing Modes - Part 2
dsPIC30F Architecture - Part 2
dsPIC30F 12-bit ADC Part 1
标准包装: 45
系列: dsPIC™ 30F
核心处理器: dsPIC
芯体尺寸: 16-位
速度: 30 MIP
连通性: CAN,I²C,SPI,UART/USART
外围设备: AC'97,欠压检测/复位,I²S,POR,PWM,WDT
输入/输出数: 30
程序存储器容量: 48KB(16K x 24)
程序存储器类型: 闪存
EEPROM 大小: 1K x 8
RAM 容量: 2K x 8
电压 - 电源 (Vcc/Vdd): 2.5 V ~ 5.5 V
数据转换器: A/D 13x12b
振荡器型: 内部
工作温度: -40°C ~ 85°C
封装/外壳: 44-VQFN 裸露焊盘
包装: 管件
产品目录页面: 651 (CN2011-ZH PDF)
配用: XLT44QFN2-ND - SOCKET TRAN ICE 44QFN/40DIP
AC164322-ND - MODULE SOCKET MPLAB PM3 28/44QFN
DV164005-ND - KIT ICD2 SIMPLE SUIT W/USB CABLE
其它名称: DSPIC30F401330IML
dsPIC30F3014/4013
DS70138G-page 44
2010 Microchip Technology Inc.
5.4
RTSP Operation
The dsPIC30F Flash program memory is organized
into rows and panels. Each row consists of 32 instruc-
tions or 96 bytes. Each panel consists of 128 rows or
4K x 24 instructions. RTSP allows the user to erase one
row (32 instructions) at a time and to program four
instructions at one time. RTSP may be used to program
multiple program memory panels, but the Table Pointer
must be changed at each panel boundary.
Each panel of program memory contains write latches
that hold 32 instructions of programming data. Prior to
the actual programming operation, the write data must
be loaded into the panel write latches. The data to be
programmed into the panel is loaded in sequential
order into the write latches; instruction 0, instruction 1,
etc. The instruction words loaded must always be from
a 32 address boundary.
The basic sequence for RTSP programming is to set up
a Table Pointer, then do a series of TBLWT instructions
to load the write latches. Programming is performed by
setting the special bits in the NVMCON register.
32 TBLWTL
and four
TBLWTH
instructions are
required to load the 32 instructions. If multiple panel
programming is required, the Table Pointer needs to be
changed and the next set of multiple write latches
written.
All of the table write operations are single-word writes
(2 instruction cycles), because only the table latches
are written. A programming cycle is required for
programming each row.
The Flash program memory is readable, writable and
erasable during normal operation over the entire VDD
range.
5.5
Control Registers
The four SFRs used to read and write the program
Flash memory are:
NVMCON
NVMADR
NVMADRU
NVMKEY
5.5.1
NVMCON REGISTER
The NVMCON register controls which blocks are to be
erased, which memory type is to be programmed and
the start of the programming cycle.
5.5.2
NVMADR REGISTER
The NVMADR register is used to hold the lower two
bytes of the Effective Address. The NVMADR register
captures the EA<15:0> of the last table instruction that
has been executed and selects the row to write.
5.5.3
NVMADRU REGISTER
The NVMADRU register is used to hold the upper byte
of the Effective Address. The NVMADRU register cap-
tures the EA<23:16> of the last table instruction that
has been executed.
5.5.4
NVMKEY REGISTER
NVMKEY is a write-only register that is used for write
protection.
To
start
a
programming
or
erase
sequence, the user must consecutively write 0x55 and
0xAA to the NVMKEY register. Refer to Section 5.6
“Programming Operations” for further details.
Note:
The user can also directly write to the
NVMADR and NVMADRU registers to
specify a program memory address for
erasing or programming.
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