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参数资料
| 型号： | ECH8310-TL-H |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/5页 |
| 文件大小： | 0K |
| 描述： | MOSFET P-CH 30V 9A ECH8 |
| 标准包装： | 3,000 |
| FET 型： | MOSFET P 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 9A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 17 毫欧 @ 4.5A，10V |
| 闸电荷(Qg) @ Vgs： | 28nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 1400pF @ 10V |
| 功率 - 最大： | 1.5W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SMD，扁平引线 |
| 供应商设备封装： | 8-ECH |
| 包装： | 带卷 (TR) |
Ordering number : ENA1430B
ECH8310
P-Channel Power MOSFET
–30V, –9A, 17m ? , Single ECH8
Features
http://onsemi.com
?
?
?
4V drive
Halogen free compliance
Protection diode in
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Symbol
VDSS
VGSS
ID
Conditions
Ratings
--30
±20
--9
Unit
V
V
A
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
IDP
PD
Tch
Tstg
PW ≤ 10 μ s, duty cycle ≤ 1%
When mounted on ceramic substrate (900mm 2 × 0.8mm)
--60
1.5
150
--55 to +150
A
W
°C
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed,
damage may occur and reliability may be affected.
Package Dimensions
Product & Package Information
unit : mm (typ)
7011A-002
? Package
? JEITA, JEDEC
: ECH8
: -
? Minimum Packing Quantity : 3,000 pcs./reel
8
Top View
2.9
5
0.15
ECH8310-TL-H
0 to 0.02
Packing Type : TL
Marking
JM
Lot No.
TL
1
4
0.65
0.3
Electrical Connection
1 : Source
8
7
6
5
2 : Source
3 : Source
4 : Gate
5 : Drain
6 : Drain
7 : Drain
8 : Drain
Bottom View
ECH8
1
2
3
4
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of this data sheet.
Semiconductor Components Industries, LLC, 2014
March, 2014
30714HK/60612TKIM/O1409TKIM TC-00002092 PE No. A1430-1/5
相关PDF资料 |
PDF描述 |
|---|---|
| ECH8315-TL-H | MOSFET P-CH 30V 7.5A ECH8 |
| ECH8410-TL-H | MOSFET N-CH 30V 12A ECH8 |
| ECH8419-TL-H | MOSFET N-CH 35V 9A ECH8 |
| ECH8420-TL-H | MOSFET N-CH 20V 14A ECH8 |
| ECH8601M-TL-H | MOSFET N-CH 24V 8A ECH8 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| ECH8315 | 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:General-Purpose Switching Device Applications |
| ECH8315-TL-H | 功能描述:MOSFET SWITCHING DEVICE RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| ECH8320 | 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:General-Purpose Switching Device Applications |
| ECH8320_12 | 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:General-Purpose Switching Device Applications |
| ECH8320-TL-H | 功能描述:MOSFET SWITCHING DEVICE RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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