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参数资料
| 型号： | ECH8315-TL-H |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/7页 |
| 文件大小： | 0K |
| 描述： | MOSFET P-CH 30V 7.5A ECH8 |
| 标准包装： | 3,000 |
| FET 型： | MOSFET P 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 7.5A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 25 毫欧 @ 3.5A，10V |
| 闸电荷(Qg) @ Vgs： | 18nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 875pF @ 10V |
| 功率 - 最大： | 1.5W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SMD，扁平引线 |
| 供应商设备封装： | 8-ECH |
| 包装： | 带卷 (TR) |
Ordering number : ENA1387A
ECH8315
P-Channel Power MOSFET
–30V, –7.5A, 25m Ω , Single ECH8
Features
http://onsemi.com
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Low ON-resistance
4V drive
Halogen free compliance
Protection diode in
Speci ? cations
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Symbol
VDSS
VGSS
ID
Conditions
Ratings
--30
±20
--7.5
Unit
V
V
A
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
IDP
PD
Tch
Tstg
PW ≤ 10 μ s, duty cycle ≤ 1%
When mounted on ceramic substrate (900mm 2 × 0.8mm)
--40
1.5
150
--55 to +150
A
W
°C
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
unit : mm (typ)
7011A-002
Product & Package Information
? Package : ECH8
? JEITA, JEDEC : -
? Minimum Packing Quantity : 3,000 pcs./reel
Top View
ECH8315-TL-H
Packing Type : TL
Marking
2.9
1
8
5
4
0.15
0 to 0.02
TL
Electrical Connection
JS
Lot No.
0.65
0.3
8
7
6
5
1 : Source
2 : Source
3 : Source
4 : Gate
5 : Drain
6 : Drain
7 : Drain
8 : Drain
1
2
3
4
Bottom View
ECH8
Semiconductor Components Industries, LLC, 2013
July, 2013
50912 TKIM/D2408PE MSIM TC-00001772 No. A1387-1/7
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