- 您现在的位置：买卖IC网 > PDF目录93349 > EDI88257CA 256Kx8 Monolithic SRAM(256Kx8 CMOS单片静态RAM（存取时间20，25，35，45，55ns）) PDF资料下载
参数资料
| 型号： | EDI88257CA |
| 英文描述： | 256Kx8 Monolithic SRAM(256Kx8 CMOS单片静态RAM（存取时间20，25，35，45，55ns）) |
| 中文描述： | 256Kx8单片的SRAM（256Kx8的CMOS单片静态随机存储器（存取时间20,25,35,45,55纳秒）） |
| 文件页数： | 2/6页 |
| 文件大小： | 121K |
| 代理商： | EDI88257CA |
2
White Electronic Designs Corporation (602) 437-1520 www.whiteedc.com
EDI88257CA
ABSOLUTE MAXIMUM RATINGS
Parameter
Unit
Voltage on any pin relative to Vss
-0.5 to 7.0
V
Operating Temperature TA (Ambient)
Industrial
-40 to +85
°C
Military
-55 to +125
°C
Storage Temperature, Ceramic
-65 to +150
°C
Power Dissipation
1.5
W
Output Current
20
mA
Junction Temperature, TJ
175
°C
RECOMMENDED OPERATING CONDITIONS
Parameter
Symbol
Min
Typ
Max
Unit
Supply Voltage
VCC
4.5
5.0
5.5
V
Supply Voltage
VSS
00
0
V
Input High Voltage
VIH
2.2
—
Vcc +0.5
V
Input Low Voltage
VIL
-0.3
—
+0.8
V
Parameter
Symbol
Condition
Max
Unit
Address Lines
CI
VIN = Vcc or Vss, f = 1.0MHz
12
pF
Input/Output Lines
CO
VOUT = Vcc or Vss, f = 1.0MHz
14
pF
These parameters are sampled, not 100% tested.
CAPACITANCE
(TA = +25
°C)
NOTE:
Stress greater than those listed under "Absolute Maximum Ratings" may cause
permanent damage to the device. This is a stress rating only and functional
operation of the device at these or any other conditions greater than those indi-
cated in the operational sections of this specification is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect reliability.
Parameter
Symbol
Conditions
Units
Min
Typ
Max
Input Leakage Current
ILI
VIN = 0V to VCC
-10
—
+10
A
Output Leakage Current
ILO
VI/O = 0V to VCC
-10
—
+10
A
Operating Power Supply Current
ICC1
WE, CS = VIL, II/O = 0mA, Min Cycle
(20-25ns)
—
225
mA
(35-55ns)
—
200
mA
Standby (TTL) Power Supply Current
ICC2
CS
≥ VIH, VIN ≤ VIL, VIN ≥ VIH
—60
mA
CS
≥ VCC -0.2V
CA
—
25
mA
Full Standby Power Supply Current
ICC3
VIN
≥ Vcc -0.2V or VIN ≤ 0.2V
LPA
—
20
mA
Output Low Voltage
VOL
IOL = 8.0mA
—
0.4
V
Output High Voltage
VOH
IOH = -4.0mA
2.4
—
V
NOTE: DC test conditions: VIL = 0.3V, VIH = Vcc -0.3V
DC CHARACTERISTICS
(VCC = 5V, TA = +25
°C)
TRUTH TABLE
OE
CS
WE
Mode
Output
Power
X
H
X
Standby
High Z
Icc2, Icc3
H
L
H
Output Deselect
High Z
Icc1
L
H
Read
Data Out
Icc1
X
L
Write
Data In
Icc1
相关PDF资料 |
PDF描述 |
|---|---|
| EDI88257C | 256Kx8 Monolithic SRAM(256Kx8 CMOS单片静态RAM（存取时间70，85，100ns）) |
| EDI88512CA-RP | 512Kx8 Plastic Monolithic SRAM CMOS(512Kx8 CMOS塑料单片静态RAM) |
| EDI88512CA | 512Kx8 Monolithic SRAM(512Kx8 CMOS单片静态RAM) |
| EDI88512C | 512Kx8 Monolithic SRAM(512Kx8 CMOS单片静态RAM) |
| EDI8C32128C | 128Kx32 SRAM Module(低功耗CMOS，512Kx32静态RAM模块（存取时间15，17，20，25，35，45，55ns）) |
相关代理商/技术参数 |
参数描述 |
|---|---|
| EDI88257CA/LPA-C | 制造商:未知厂家 制造商全称:未知厂家 功能描述:SRAM |
| EDI88257CA17CB | 制造商:Microsemi Corporation 功能描述:256K X 8 SRAM MONOLITHIC, 5V, 17NS, 32 DIP, TINNED LEADS, MI - Bulk |
| EDI88257CA17CI | 制造商:Microsemi Corporation 功能描述:256K X 8 SRAM MONOLITHIC, 5V, 17NS, 32 DIP, INDUSTRIAL SCREE - Bulk |
| EDI88257CA20CB | 制造商:Microsemi Corporation 功能描述:256K X 8 SRAM MONOLITHIC, 5V, 20NS, 32 DIP, TINNED LEADS, MI - Bulk |
| EDI88257CA20CI | 制造商:Microsemi Corporation 功能描述:256K X 8 SRAM MONOLITHIC, 5V, 20NS, 32 DIP, INDUSTRIAL SCREE - Bulk |
发布紧急采购，3分钟左右您将得到回复。