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参数资料
| 型号： | EDI88257CA |
| 英文描述： | 256Kx8 Monolithic SRAM(256Kx8 CMOS单片静态RAM（存取时间20，25，35，45，55ns）) |
| 中文描述： | 256Kx8单片的SRAM（256Kx8的CMOS单片静态随机存储器（存取时间20,25,35,45,55纳秒）） |
| 文件页数： | 3/6页 |
| 文件大小： | 121K |
| 代理商： | EDI88257CA |
3
White Electronic Designs Corporation (602) 437-1520 www.whiteedc.com
EDI88257CA
Input Pulse Levels
VSS to 3.0V
Input Rise and Fall Times
5ns
Input and Output Timing Levels
1.5V
Output Load
Figure 1
NOTE: For tEHQZ, tGHQZ and tWLQZ, CL = 5pF Figure 2)
30pF
480
Vcc
Q
Figure 1
Figure 2
255
5pF
480
Vcc
Q
255
AC TEST CONDITIONS
AC CHARACTERISTICS – READ CYCLE
(VCC = 5.0V, VSS = 0V, TA = -55
°C to +125°C))
Symbol
20ns
25ns
35ns
45ns
55ns
Parameter
JEDEC
Alt.
Min
Max
Min
Max
Min
Max
Min
Max
Min
Max
Units
Read Cycle Time
tAVAV
tRC
20
25
35
45
55
ns
Address Access Time
tAVQV
tAA
20
25
35
45
55
ns
Chip Select Access Time
tELQV
tACS
20
25
35
45
55
ns
Chip Select to Output in Low Z (1)
tELQX
tCLZ
3
3333
ns
Chip Disable to Output in High Z (1)
tEHQZ
tCHZ
0
8
0
10
0
15
0
20
0
20
ns
Output Hold from Address Change
tAVQX
tOH
0
0000
ns
Output Enable to Output Valid
tGLQV
tOE
10
12
15
25
ns
Output Enable to Output in Low Z (1)
tGLQX
tOLZ
0
0000
ns
Output Disable to Output in High Z (1)
tGHQZ
tOHZ
0
8
0
10
0
15
0
20
0
20
ns
1. This parameter is guaranteed by design but not tested.
AC CHARACTERISTICS – WRITE CYCLE
(VCC = 5.0V, VSS = 0V, TA = -55
°C to +125°C)
Symbol
20ns
25ns
35ns
45ns
55ns
Parameter
JEDEC
Alt.
Min
Max
Min
Max
Min
Max
Min
Max
Min
Max
Units
Write Cycle Time
tAVAV
tWC
20
25
35
45
ns
Chip Select to End of Write
tELWH
tCW
15
17
25
30
ns
tELEH
tCW
15
17
25
30
ns
Address Setup Time
tAVWL
tAS
00
0
ns
tAVEL
tAS
00
0
ns
Address Valid to End of Write
tAVWH
tAW
15
17
25
30
ns
tAVEH
tAW
15
17
25
30
ns
Write Pulse Width
tWLWH
tWP
15
17
25
30
ns
tWLEH
tWP
15
17
25
30
ns
Write Recovery Time
tWHAX
tWR
00
0
ns
tEHAX
tWR
00
0
ns
Data Hold Time
tWHDX
tDH
00
0
ns
tEHDX
tDH
00
0
ns
Write to Output in High Z (1)
tWLQZ
tWHZ
0
8
010
0
25
030
0
30
ns
Data to Write Time
tDVWH
tDW
10
12
20
25
ns
tDVEH
tDW
10
12
20
25
ns
Output Active from End of Write (1)
tWHQX
tWLZ
00
0
ns
1. This parameter is guaranteed by design but not tested.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| EDI88257CA/LPA-C | 制造商:未知厂家 制造商全称:未知厂家 功能描述:SRAM |
| EDI88257CA17CB | 制造商:Microsemi Corporation 功能描述:256K X 8 SRAM MONOLITHIC, 5V, 17NS, 32 DIP, TINNED LEADS, MI - Bulk |
| EDI88257CA17CI | 制造商:Microsemi Corporation 功能描述:256K X 8 SRAM MONOLITHIC, 5V, 17NS, 32 DIP, INDUSTRIAL SCREE - Bulk |
| EDI88257CA20CB | 制造商:Microsemi Corporation 功能描述:256K X 8 SRAM MONOLITHIC, 5V, 20NS, 32 DIP, TINNED LEADS, MI - Bulk |
| EDI88257CA20CI | 制造商:Microsemi Corporation 功能描述:256K X 8 SRAM MONOLITHIC, 5V, 20NS, 32 DIP, INDUSTRIAL SCREE - Bulk |
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