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参数资料
| 型号： | EE-SY1200 |
| 厂商： | Omron Electronics Inc-EMC Div |
| 文件页数： | 2/4页 |
| 文件大小： | 0K |
| 描述： | SENSOR PHOTO ULTRA COMP SMD |
| 标准包装： | 1 |
| 检测方法： | 反射 |
| 电压 - 集电极发射极击穿（最大）： | 30V |
| 电流 - 集电极 (Ic)（最大）： | 20mA |
| 电流 - DC 正向(If)： | 50mA |
| 输出类型： | 光电晶体管 |
| 响应时间： | 30µs，30µs |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 4-SMD，无引线 |
| 包装： | 标准包装 |
| 工作温度： | -25°C ~ 85°C |
| 其它名称： | OR1038DKR |
EE-SY1200
■ Engineering Data
Fig 1. Forward Current vs. Collector
Dissipation Temperature Rating
Fig 2. Forward Current vs. Forward Voltage
Characteristics (Typical)
Fig 3. Light Current vs. Forward Current
Characteristics (Typical)
60
60
3,000
Ta=25 ° C
50
50
Ta=-30 ° C
2,500
V CE =2V
40
40
Ta=+25 ° C
2,000
d=1mm
Ta=+70 ° C
30
20
30
20
1,500
1,000
10
P C
I F
10
500
V CE =2V
d=4mm
0
-40
-20
0
20 40 60 80 100
0
0
0.2
0.4
0.6
0.8
1
1.2 1.4 1.6 1.8
0
0
5
10
15 20
Ambient temperature Ta ( ° C)
Fig 4. Light Current vs. Collector-Emitter
Voltage Characteristics (Typical)
1,600
Forward voltage V F (V)
Fig 5. Relative Light Current vs. Ambient
Temperature Characteristics (Typical)
120
Forward current I F (mA)
Fig 6. Dark Current vs. Ambient
Temperature Characteristics (Typical)
10,000
1,400
I F =10mA, d=1mm
110
I F =10mA
V CE =2V
1,000
1,200
100
1,000
800
I F =7mA, d=1mm
I F =15mA, d=4mm
100
90
10
1
600
I F =10mA, d=4mm
80
400
I F =4mA, d=1mm
0.1
200
I F =7mA, d=4mm
I F =2mA, d=1mm
70
0.01
I F =4mA, d=4mm
0
0
2
4
I F =2mA, d=4mm
6 8 10
Collector-Emitter voltage V CE (V)
60
-40
-20
0
20
40 60 80 100
Ambient temperature Ta ( ° C)
0.001
-30 -20 -10
0
10 20 30 40 50 60 70 80 90
Ambient temperature Ta ( ° C)
Fig 7. Response Time vs. Load Resistance
Characteristics (Typical)
10,000
Fig 8. Sensing Distance Characteristics
(Typical)
100
Fig 9. Sensing Position Characteristics
(Typical)
120
90
Aluminum-deposited surface
d
100
d
White
Black
1,000
tr
80
70
I F = 4mA, 10mA
V CE = 10V
80
-
0
L
+
60
100
tf
50
60
I F = 10mA
V CE = 2V
d = 4mm
40
30
40
10
20
10
20
I F = 4mA
V CE = 2V
d = 1mm
1
0.1
1
10 100
0
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
0
-6
-5
-4
-3
-2
-1
0 1
2
3
4
Load resistance R L (k ? )
Fig 10. Sensing Position Characteristics
(Typical)
120
Distance d (mm)
Fig 11. Response Time Measurement
Circuit
Input
Card moving distance L (mm)
Fig 12. Light Current Measurement Setup
Diagram
100
d
White
Black
0
t
80
-
0
L
+
Output
0
90%
10%
t
Aluminum-deposited surface
t r
t f
60
I F= 10mA
V CE= 2V
Input
I L
V CC
Glass
d
40
d = 4mm
20
I F= 4mA
V CE= 2V
d = 1mm
R L
Output
Sensor
0
-6
-5
-4
-3
-2
-1
0 1
2
3
4
Card moving distance L (mm)
2
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相关代理商/技术参数 |
参数描述 |
|---|---|
| EESY12001 | 制造商:Omron Electronic Components LLC 功能描述:PHOTOMICROSENSOR REFLECTIVE |
| EESY124 | 制造商:Omron Electronic Components LLC 功能描述:SENSR OPTO TRANS 1MM REFL TH PCB 制造商:Omron Electronic Components LLC 功能描述:OPTO SWITCH REFLECTIVE 1MM |
| EE-SY124 | 功能描述:光学开关（反射型，光电晶体管输出） REFL PHOTOTRANSISTOR RoHS:否 制造商:Fairchild Semiconductor 感应距离:1 mm 输出设备:Phototransistor 集电极—发射极最大电压 VCEO:30 V 最大集电极电流:20 mA 正向电压:1.2 V 反向电压:5 V 最大工作温度:+ 85 C 最小工作温度:- 25 C 安装风格:SMD/SMT 封装:Reel |
| EESY125 | 制造商:Omron Electronic Components LLC 功能描述:OPTO SENSOR 1MM REFLECT SMD 制造商:Omron Electronic Components LLC 功能描述:OPTO SWITCH REFLECTIVE 1MM |
| EE-SY125 | 功能描述:光学开关（反射型，光电晶体管输出） REFL PHOTOTRANSISTOR RoHS:否 制造商:Fairchild Semiconductor 感应距离:1 mm 输出设备:Phototransistor 集电极—发射极最大电压 VCEO:30 V 最大集电极电流:20 mA 正向电压:1.2 V 反向电压:5 V 最大工作温度:+ 85 C 最小工作温度:- 25 C 安装风格:SMD/SMT 封装:Reel |
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