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| 型号： | EM6K6T2R |
| 厂商： | Rohm Semiconductor |
| 文件页数： | 1/4页 |
| 文件大小： | 0K |
| 描述： | MOSFET 2N-CH 20V 300MA EMT6 |
| 产品目录绘图： | EM6 Series EMT-6 |
| 标准包装： | 1 |
| FET 型： | 2 个 N 沟道（双） |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 20V |
| 电流 - 连续漏极(Id) @ 25° C： | 300mA |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 1 欧姆 @ 300mA，4V |
| Id 时的 Vgs(th)（最大）： | 1V @ 1mA |
| 输入电容 (Ciss) @ Vds： | 25pF @ 10V |
| 功率 - 最大： | 150mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | SOT-563，SOT-666 |
| 供应商设备封装： | EMT6 |
| 包装： | 标准包装 |
| 产品目录页面： | 1638 (CN2011-ZH PDF) |
| 其它名称： | EM6K6T2RDKR |
EM6K6
Transistor
1.8V Drive Nch+Nch MOSFET
EM6K6
Structure
Silicon N-channel
MOSFET
Applications
Switching
Features
1) The MOSFET elements are independent,
eliminating mutual interference.
2) Mounting cost and area can be cut in half.
3) Low on-resistance.
4) Low voltage drive (1.8V) makes this device ideal for
portable equipment.
Packaging specifications
Dimensions (Unit : mm)
EMT6
Each lead has same dimensions
Abbreviated symbol : K06
Equivalent circuit
Type
Package
Code
Taping
T2R
(6)
(5)
Gate
Protection
Diode
?
(4)
Basic ordering unit
(pieces)
8000
Tr1
EM6K6
Tr2
(1)Tr1
(2)Tr1
Source
Gate
(2)
(3)
(1)
Absolute maximum ratings (Ta=25 ° C)
<It is the same ratings for the Tr1 and Tr2>
?
Gate
Protection
Diode
? A protection diode has been built in between the gate and
(3)Tr2
(4)Tr2
(5)Tr2
(6)Tr1
Drain
Source
Gate
Drain
Parameter
Drain ? source voltage
Gate ? source voltage
Symbol
V DSS
V GSS
Limits
20
± 8
Unit
V
V
the source to protect against static electricity when the product
is in use. Use the protection circuit when rated voltages are exceeded.
Drain current
Continuous
Pulsed
I D
I DP ? 1
± 300
± 600
mA
mA
Total power dissipation
P D
? 2
150
120
mW / TOTAL
mW / ELEMENT
Channel temperature
Storage temperature
Tch
Tstg
150
? 55 to + 150
° C
° C
? 1 Pw ≤ 10 μ s, Duty cycle ≤ 1%
? 2 Each terminal mounted on a recommended land.
Thermal resistance
Parameter
Channel to ambient
Symbol
Rth(ch-a) ?
Limits
833
1042
Unit
° C/W / TOTAL
° C/W / ELEMENT
? Each terminal mounted on a recommended land
1/3
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相关代理商/技术参数 |
参数描述 |
|---|---|
| EM6K7 | 制造商:ROHM 制造商全称:Rohm 功能描述:1.2V Drive Nch+Nch MOSFET |
| EM6K7T2R | 功能描述:MOSFET TRNSISTR DUAL MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| EM6M1 | 制造商:ROHM 制造商全称:Rohm 功能描述:2.5V Drive NchPch MOSFET |
| EM6M1T2R | 功能描述:MOSFET Sm Signal, Sw MOSFET N/P Ch, -20V, 0.15A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| EM6M2 | 制造商:ROHM 制造商全称:Rohm 功能描述:1.2V Drive Nch+Pch MOSFET |
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