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参数资料
| 型号： | EM6M2T2R |
| 厂商： | Rohm Semiconductor |
| 文件页数： | 2/8页 |
| 文件大小： | 0K |
| 描述： | MOSFET N/P-CH 20V 200MA EMT6 |
| 标准包装： | 8,000 |
| FET 型： | N 和 P 沟道 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 20V |
| 电流 - 连续漏极(Id) @ 25° C： | 200mA |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 1 欧姆 @ 200mA，4V |
| Id 时的 Vgs(th)（最大）： | 1V @ 1mA |
| 输入电容 (Ciss) @ Vds： | 25pF @ 10V |
| 功率 - 最大： | 150mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | SOT-563，SOT-666 |
| 供应商设备封装： | EMT6 |
| 包装： | 带卷 (TR) |
| 其它名称： | EM6M2T2R-ND EM6M2T2RTR |
EM6M2
N-ch
Electrical characteristics (Ta=25 ° C)
Data Sheet
Parameter
Gate-source leakage
Symbol
I GSS
Min.
?
Typ.
?
Max.
± 10
Unit
μ A
Conditions
V GS = ± 8V, V DS =0V
Drain-source breakdown voltage V (BR) DSS
20
?
?
V
I D = 1mA, V GS =0V
?
Zero gate voltage drain current
Gate threshold voltage
Static drain-source on-state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
I DSS
V GS (th)
R DS (on)
Y fs ?
C iss
C oss
C rss
?
0.3
?
?
?
?
?
0.2
?
?
?
?
?
0.7
0.8
1.0
1.2
1.6
?
25
10
10
1
1.0
1.0
1.2
1.4
2.4
4.8
?
?
?
?
μ A
V
?
?
?
?
?
S
pF
pF
pF
V DS = 20V, V GS =0V
V DS = 10V, I D = 1mA
I D = 200mA, V GS = 4.0V
I D = 200mA, V GS = 2.5V
I D = 200mA, V GS = 1.8V
I D = 40mA, V GS = 1.5V
I D = 20mA, V GS = 1.2V
V DS = 10V, I D = 200mA
V DS = 10V
V GS = 0V
f=1MHz
Turn-on delay time
t d (on) ?
?
5
?
ns
V DD
10V
?
?
Rise time
Turn-off delay time
Fall time
t r
t d (off) ?
t f
?
?
?
10
15
10
?
?
?
ns
ns
ns
I D = 150mA
V GS = 4.0V
R L 67 ?
R G = 10 ?
? Pulsed
Body diode characteristics (Source-drain) (Ta=25 ° C)
Parameter
Forward voltage
Symbol
V SD ?
Min.
?
Typ.
?
Max.
1.2
Unit
V
Conditions
I S = 100mA, V GS =0V
? Pulsed
P-ch
Electrical characteristics (Ta=25 ° C)
Parameter
Gate-source leakage
Symbol
I GSS
Min.
?
Typ.
?
Max.
± 10
Unit
μ A
Conditions
V GS = ± 10V, V DS =0V
Drain-source breakdown voltage V (BR) DSS
? 20
?
?
V
I D = ? 1mA, V GS =0V
?
?
?
Zero gate voltage drain current
Gate threshold voltage
Static drain-source on-state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
I DSS
V GS (th)
R DS (on)
Y fs ?
C iss
C oss
C rss
t d (on) ?
t r
t d (off) ?
t f
?
? 0.3
?
?
?
?
?
0.2
?
?
?
?
?
?
?
?
?
0.8
1.0
1.3
1.6
2.4
?
115
10
6
6
4
17
17
? 1
? 1.0
1.2
1.5
2.2
3.5
9.6
?
?
?
?
?
?
?
?
μ A
V
?
?
?
?
?
S
pF
pF
pF
ns
ns
ns
ns
V DS = ? 20V, V GS =0V
V DS = ? 10V, I D = ? 100 μ A
I D = ? 200mA, V GS = ? 4.5V
I D = ? 100mA, V GS = ? 2.5V
I D = ? 100mA, V GS = ? 1.8V
I D = ? 40mA, V GS = ? 1.5V
I D = ? 10mA, V GS = ? 1.2V
V DS = ? 10V, I D = ? 200mA
V DS = ? 10V
V GS = 0V
f=1MHz
V DD ? 10V
I D = ? 100mA
V GS = ? 4.5V
R L 100 ?
R G = 10 ?
? Pulsed
Body diode characteristics (Source-drain) (Ta=25 ° C)
Parameter
Forward voltage
Symbol
V SD ?
Min.
?
Typ.
?
Max.
? 1.2
Unit
V
Conditions
I S = ? 200mA, V GS =0V
? Pulsed
www.rohm.com
c 2009 ROHM Co., Ltd. All rights reserved.
2/7
2009.07 - Rev.A
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