参数资料
型号: EM6M2T2R
厂商: Rohm Semiconductor
文件页数: 5/8页
文件大小: 0K
描述: MOSFET N/P-CH 20V 200MA EMT6
标准包装: 8,000
FET 型: N 和 P 沟道
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 20V
电流 - 连续漏极(Id) @ 25° C: 200mA
开态Rds(最大)@ Id, Vgs @ 25° C: 1 欧姆 @ 200mA,4V
Id 时的 Vgs(th)(最大): 1V @ 1mA
输入电容 (Ciss) @ Vds: 25pF @ 10V
功率 - 最大: 150mW
安装类型: 表面贴装
封装/外壳: SOT-563,SOT-666
供应商设备封装: EMT6
包装: 带卷 (TR)
其它名称: EM6M2T2R-ND
EM6M2T2RTR
EM6M2
P-ch
Electrical characteristic curve
Data Sheet
0.2
0.15
V GS = -10.0V
V GS = -4.5V
V GS = -3.2V
Ta=25°C
Pulsed
0.2
0.15
V GS = -4.5V
V GS = -2.5V
V GS = -1.8V
Ta=25°C
Pulsed
1
0.1
V DS = -10V
Pulsed
0.1
V GS = -1.5V
V GS = -2.5V
V GS = -2.0V
V GS = -1.8V
0.1
V GS = -1.5V
V GS = -1.2V
0.01
Ta= 125°C
Ta= 75°C
Ta= 25°C
Ta= - 25°C
0.05
0
V GS = -1.2V
V GS = -1.0V
0.05
0
V GS = -1.0V
0.001
0.0001
0
0.2
0.4
0.6
0.8
1
0
2
4
6
8
10
0
0.5
1
1.5
DRAIN-SOURCE VOLTAGE : -V DS [V]
Fig.1 Typical output characteristics( Ⅰ )
DRAIN-SOURCE VOLTAGE : -V DS [V]
Fig.2 Typical output characteristics( Ⅱ )
GATE-SOURCE VOLTAGE : -V GS [V]
Fig.3 Typical Transfer Characteristics
10000
Ta=25°C
Pulsed
10000
V GS = -4.5V
Pulsed
Ta=125°C
Ta=75°C
Ta=25°C
Ta= -25°C
10000
V GS = -2.5V
Pulsed
Ta=125°C
Ta=75°C
Ta=25°C
Ta= -25°C
1000
100
V GS = -1.2V
V GS = -1.5V
V GS = -1.8V
V GS = -2.5V
V GS = -4.5V
1000
100
1000
100
0.001
0.01
0.1
1
0.001
0.01
0.1
1
0.001
0.01
0.1
1
DRAIN-CURRENT : -I D [A]
Fig.4 Static Drain-Source On-State
Resistance vs. Drain Current( Ι )
DRAIN-CURRENT : -I D [A]
Fig.5 Static Drain-Source On-State
Resistance vs. Drain Current( Π )
DRAIN-CURRENT : -I D [A]
Fig.6 Static Drain-Source On-State
Resistance vs. Drain Current( Ⅲ )
10000
V GS = -1.8V
Pulsed
Ta=125°C
Ta=75°C
10000
V GS = -1.5V
Pulsed
10000
V GS = -1.2V
Pulsed
Ta=25°C
Ta= -25°C
Ta=125°C
1000
1000
Ta=125°C
Ta=75°C
1000
Ta=75°C
Ta=25°C
Ta= -25°C
Ta=25°C
Ta= -25°C
100
100
100
0.001
0.01
0.1
1
0.001
0.01
0.1
0.001
0.01
0.1
DRAIN-CURRENT : -I D [A]
Fig.7 Static Drain-Source On-State
Resistance vs. Drain Current( Ⅳ )
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c 2009 ROHM Co., Ltd. All rights reserved.
DRAIN-CURRENT : -I D [A]
Fig.8 Static Drain-Source On-State
Resistance vs. Drain Current( Ⅴ )
5/7
DRAIN-CURRENT : -I D [A]
Fig.9 Static Drain-Source On-State
Resistance vs. Drain Current( Ⅵ )
2009.07 - Rev.A
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