- 您现在的位置：买卖IC网 > PDF目录223750 > ES29BDS160ET-90RTGI (优先(苏州)半导体有限公司) 4Mbit(512Kx 8/256K x 16) CMOS 3.0 Volt-only, Boot Sector Flash Memory PDF资料下载
参数资料
| 型号： | ES29BDS160ET-90RTGI |
| 厂商： | 优先(苏州)半导体有限公司 |
| 英文描述： | 4Mbit(512Kx 8/256K x 16) CMOS 3.0 Volt-only, Boot Sector Flash Memory |
| 中文描述： | 的4Mb（512Kx 8/256K × 16），3.0伏的CMOS只，引导扇区闪存 |
| 文件页数： | 12/51页 |
| 文件大小： | 697K |
| 代理商： | ES29BDS160ET-90RTGI |
第1页第2页第3页第4页第5页第6页第7页第8页第9页第10页第11页当前第12页第13页第14页第15页第16页第17页第18页第19页第20页第21页第22页第23页第24页第25页第26页第27页第28页第29页第30页第31页第32页第33页第34页第35页第36页第37页第38页第39页第40页第41页第42页第43页第44页第45页第46页第47页第48页第49页第50页第51页
ES I
2
Rev.0B January 5, 2006
ES29LV400E
Excel Semiconductor inc.
The ES29LV400 is a 4 megabit, 3.0 volt-only flash
memory device, organized as 512K x 8 bits (Byte
mode) or 256K x 16 bits (Word mode) which is con-
figurable by BYTE#. Four boot sectors and seven
main sectors are provided : 16Kbytes x 1, 8Kbytes
x 2, 32Kbytes x 1 and 64Kbytes x 7. The device is
manufactured with ESI’s proprietary, high perfor-
mance and highly reliable 0.18um CMOS flash
technology. The device can be programmed or
erased in-system with standard 3.0 Volt Vcc supply
( 2.7V-3.6V) and can also be programmed in stan-
dard EPROM programmers. The device offers min-
imum endurance of 100,000 program/erase cycles
and more than 10 years of data retention.
The ES29LV400 offers access time as fast as
70ns, allowing operation of high-speed micropro-
cessors without wait states. Three separate control
pins are provided to eliminate bus contention : chip
enable (CE#), write enable (WE#) and output
enable (OE#).
All program and erase operation are automatically
and internally performed and controlled by embed-
ded program/erase algorithms built in the device.
The device automatically generates and times the
necessary high-voltage pulses to be applied to the
cells, performs the verification, and counts the num-
ber of sequences. Some status bits (DQ7, DQ6 and
DQ5) read by data# polling or toggling between
consecutive read cycles provide to the users the
internal status of program/erase operation: whether
it is successfully done or still being progressed.
The ES29LV400 is completely compatible with the
JEDEC standard command set of single power sup-
ply Flash. Commands are written to the internal
command register using standard write timings of
microprocessor and data can be read out from the
cell array in the device with the same way as used in
other EPROM or flash devices.
GENERAL PRODUCT DESCRIPTION
相关PDF资料 |
PDF描述 |
|---|---|
| ES29BDS160FT-70TGI | 4Mbit(512Kx 8/256K x 16) CMOS 3.0 Volt-only, Boot Sector Flash Memory |
| ES29BDS320DT-90RTGI | 4Mbit(512Kx 8/256K x 16) CMOS 3.0 Volt-only, Boot Sector Flash Memory |
| ES29BDS320ET-90RTGI | 4Mbit(512Kx 8/256K x 16) CMOS 3.0 Volt-only, Boot Sector Flash Memory |
| ES29BDS320FT-70TGI | 4Mbit(512Kx 8/256K x 16) CMOS 3.0 Volt-only, Boot Sector Flash Memory |
| ES29BDS400DB-70TGI | 4Mbit(512Kx 8/256K x 16) CMOS 3.0 Volt-only, Boot Sector Flash Memory |
相关代理商/技术参数 |
参数描述 |
|---|---|
| ES29BDS160ET-90TGI | 制造商:EXCELSEMI 制造商全称:EXCELSEMI 功能描述:16Mbit(2M x 8/1M x 16) CMOS 3.0 Volt-only, Boot Sector Flash Memory |
| ES29BDS160F-12RTG | 制造商:EXCELSEMI 制造商全称:EXCELSEMI 功能描述:32Mbit(4M x 8/2M x 16) CMOS 3.0 Volt-only, Boot Sector Flash Memory |
| ES29BDS160F-70RTG | 制造商:EXCELSEMI 制造商全称:EXCELSEMI 功能描述:4Mbit(512Kx 8/256K x 16) CMOS 3.0 Volt-only, Boot Sector Flash Memory |
| ES29BDS160F-70WCI | 制造商:EXCELSEMI 制造商全称:EXCELSEMI 功能描述:32Mbit(4M x 8/2M x 16) CMOS 3.0 Volt-only, Boot Sector Flash Memory |
| ES29BDS160FB-12RTG | 制造商:EXCELSEMI 制造商全称:EXCELSEMI 功能描述:32Mbit(4M x 8/2M x 16) CMOS 3.0 Volt-only, Boot Sector Flash Memory |
发布紧急采购，3分钟左右您将得到回复。