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| 型号： | ES29BDS400ET-90RTGI |
| 厂商： | 优先(苏州)半导体有限公司 |
| 英文描述： | 4Mbit(512Kx 8/256K x 16) CMOS 3.0 Volt-only, Boot Sector Flash Memory |
| 中文描述： | 的4Mb（512Kx 8/256K × 16），3.0伏的CMOS只，引导扇区闪存 |
| 文件页数： | 17/51页 |
| 文件大小： | 697K |
| 代理商： | ES29BDS400ET-90RTGI |
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ES I
24
Rev.0B January 5, 2006
ES29LV400E
Excel Semiconductor inc.
time-out also applies after each additional sector
erase command. When the time-out period is com-
plete, DQ3 switches from a “0” to a”1”. If the time
between additional sector erase commands from the
system can be assumed to be less than 50us, the
system need not monitor DQ3. See also the Sector
Erase Command Sequence section. After the sector
erase command is written, the system should read
the status of DQ7 (Data# Polling) or DQ6 (Toggle Bit
I) to ensure that the device has accepted the com-
mand sequence, and then read DQ3. If DQ3 is “1”,
the Embedded Erase algorithm has begun; all fur-
ther commands (except Erase Suspend) are ignored
until the erasure operation is complete. If DQ3 is “0”,
the device will accept additional sector erase com-
mands. To ensure the command has been accepted,
the system software should check the status of DQ3
prior to and following each subsequent sector erase
command. If DQ3 is high on the second status
check, the last command might not have been
accepted. In Table 6, DQ3
status operation is well
defined and summarized with other status bits, DQ7,
DQ6, DQ5, and DQ2.
DQ5 ( EXCEEDED TIMING LIMITS )
DQ5 indicates whether the program or erase time
has exceeded a specified internal pulse count limit.
Under these conditions DQ5 produces a “1”, indi-
cating that the program or erase cycle was not suc-
cessfully completed. The device may output a “1”
on DQ5 if the system tries to program a “1” to a
location that was previously programmed to “0”
Only an erase operation can change a “0” back to a
“1”. Under this condition, the device halts the opera-
tion, and when the timing limit has been exceeded,
DQ5 produces a ”1”. Under both these conditions,
the system must write the reset command to return
to the read mode.
DQ3 ( SECTOR ERASE TIMER )
After writing a sector erase command sequence,
the system may read DQ3 to determine whether or
not erasure has begun. (The sector erase time
does not apply to the chip erase command.) If addi-
tional sectors are selected for erasure, the entire
Table 6. Write Operation Status
Notes :
1. DQ5 switches to “1” when an Embedded Program or Embedded Erase operation has exceeded the maximum timing limits. Refer to the
section on DQ5 for more information.
2. DQ7 and DQ2 require a valid address when reading status information. Refer to the appropriate subsection for further details.
Status
DQ7
(Note 2)
DQ6
DQ5
(Note 1)
DQ3
DQ2
(Note 2)
RY/
BY#
Standard
Mode
Embedded Program Algorithm
DQ7#
Toggle
0
N/A
No toggle
0
Embedded Erase Algorithm
0
Toggle
0
1
Toggle
0
Erase Sus-
pend Mode
Erase-Suspend-
Read
Erase Suspended
Sector
1
No toggle
0
N/A
Toggle
1
Non-Erase
Suspended Sector
Data
1
Erase-Suspend-Program
DQ7#
Toggle
0
N/A
0
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相关代理商/技术参数 |
参数描述 |
|---|---|
| ES29BDS400ET-90TGI | 制造商:EXCELSEMI 制造商全称:EXCELSEMI 功能描述:16Mbit(2M x 8/1M x 16) CMOS 3.0 Volt-only, Boot Sector Flash Memory |
| ES29BDS400F-12RTG | 制造商:EXCELSEMI 制造商全称:EXCELSEMI 功能描述:32Mbit(4M x 8/2M x 16) CMOS 3.0 Volt-only, Boot Sector Flash Memory |
| ES29BDS400F-70WCI | 制造商:EXCELSEMI 制造商全称:EXCELSEMI 功能描述:32Mbit(4M x 8/2M x 16) CMOS 3.0 Volt-only, Boot Sector Flash Memory |
| ES29BDS400FB-12RTG | 制造商:EXCELSEMI 制造商全称:EXCELSEMI 功能描述:32Mbit(4M x 8/2M x 16) CMOS 3.0 Volt-only, Boot Sector Flash Memory |
| ES29BDS400FB-12TG | 制造商:EXCELSEMI 制造商全称:EXCELSEMI 功能描述:16Mbit(2M x 8/1M x 16) CMOS 3.0 Volt-only, Boot Sector Flash Memory |
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