参数资料
型号: EVB3020A
英文描述: GSM Multiband RF Transceiver
中文描述: 手机多频段射频收发器
文件页数: 43/44页
文件大小: 409K
代理商: EVB3020A
Advance Data Sheet
W3020 GSM Multiband RF Transceiver
December 1999
8
Lucent Technologies Inc.
Absolute Maximum Ratings
Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. These are
absolute stress ratings only. Functional operation of the device is not implied at these or any other conditions in
excess of those given in the operations sections of this data sheet. Exposure to maximum ratings for extended
periods can adversely affect device reliability.
Parameter
Symbol
Min
Max
Unit
Ambient Operating Temperature
TA
–30
85
°C
Storage Temperature
Tstg
–65
150
°C
Lead Temperature (soldering, 10 s)
300
°C
Positive Supply Voltage
VDD
0
4.5
V
Power Dissipation
PD
550
mW
ac Peak-to-Peak Input Voltage
Vp-p
0
VDD
V
Digital Voltages
0
VDD
V
ESD Precautions
Although protection circuitry has been designed into this device, proper precautions should be taken to avoid
exposure to electrostatic discharge (ESD) during handling and mounting. Lucent Technologies Microelectronics
Group employs a human-body model (HBM) and a charged-device model (CDM) for ESD-susceptibility testing
and design evaluation. ESD voltage thresholds are dependent on the circuit parameters used to define the
model. No industry-wide standard has been adopted for CDM. However, a standard HBM (resistance = 1500
,
capacitance = 100 pF) is widely used and, therefore, can be used for comparison purposes. The HBM ESD
threshold presented here was obtained by using these circuit parameters:
Parameter
Method
Rating
Unit
ESD Threshold Voltage
HBM
1500
V
ESD Threshold Voltage (corner pins)
CDM
1000
V
ESD Threshold Voltage
CDM
500
V
Operating Range
The device is fully functional within the following operation ranges. No claims of parametric performance are
stated within this range. For parametric performance, refer to the individual specifications and operating
conditions.
Parameter
Symbol
Min
Max
Unit
Operating Temperature
TA
–30
85
°C
Nominal Operating Voltage
VDD
2.7
3.6
V
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