参数资料
型号: EVB3020A
英文描述: GSM Multiband RF Transceiver
中文描述: 手机多频段射频收发器
文件页数: 5/44页
文件大小: 409K
代理商: EVB3020A
Advance Data Sheet
December 1999
W3020 GSM Multiband RF Transceiver
Lucent Technologies Inc.
13
IF/Baseband Amplifier (continued)
Table 6. IF/Baseband Amplifier Performance
VDD = 2.7 V; TA = 25 °C ± 3 °C.
Parameter
Min
Typ
Max
Unit
Total Voltage Gain (referred to 50
input)*
60
65
68
dB
Demodulator Gain
4
dB
Absolute Gain Accuracy
–2.0
2.0
dB
Relative Gain Step Accuracy
–1.0
1.0
dB
Noise Figure (matched to 50
)
§
6.2
12
dB
O/P 1 dB Compression Point (0 dB gain
setting)
–1.5
dBm(V)**
O/P 1 dB Compression Point (>16 dB
baseband gain setting)
12
dBm(V)**
Output Load Capacitance (differential)
10
pF
Output Load Capacitance (single-end to
ground)
10
pF
Output Load Resistance (differential)
20
k
Output Load Resistance (single-end to
ground)
40
k
IF Enable Time
s
I/Q Common-mode Output Voltage
0.5 * VDDB – 0.15
0.5 * VDDB
0.5 * VDDB + 0.15
V
I/Q Output Current
±50
A
I/Q Phase Accuracy
§
3.5
degrees
I/Q Amplitude Mismatch
§
–1
±0.1
1
dB
I/Q Differential Offset Voltage
(corrected)
§,
5
±50
mV
Offset Correction Decay Rate
§
2
mV/s
IF Input Impedance (diffferential)
32 dB gain setting
0 dB gain setting
114 – j497
92 – j497
* 64 dB DGC setting. This voltage gain is measured from the input of the IF strip to either the I or Q channel output.
The absolute accuracy refers to the total gain variation from the nominal condition over temperature (–30 °C to +85 °C) after gain calibration at
nominal temperature.
The relative gain step accuracy is determined after the 32 dB gain stage has been calibrated at nominal temperature. The total gain step accuracy
at any of the possible gain conditions should not vary more than the specified amount within a 20 dB measurement window.
§ At 64 dB gain setting.
** This is a voltage and specified in dBm as if the voltage were across a 50
load.
Offset tested in coarse dc-correction mode only.
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