- 您现在的位置：买卖IC网 > Datasheet目录413 > FCPF20N60T (Fairchild Semiconductor)MOSFET N-CH 600V 20A TO-220F Datasheet资料下载
参数资料
| 型号： | FCPF20N60T |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 2/10页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 600V 20A TO-220F |
| 标准包装： | 50 |
| 系列： | SuperFET™ |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 600V |
| 电流 - 连续漏极(Id) @ 25° C： | 20A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 190 毫欧 @ 10A，10V |
| Id 时的 Vgs(th)（最大）： | 5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 98nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 3080pF @ 25V |
| 功率 - 最大： | 39W |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-220-3 整包 |
| 供应商设备封装： | TO-220F |
| 包装： | 管件 |
Package Marking and Ordering Information
Device Marking
FCP20N60
FCPF20N60
Device
FCP20N60
FCPF20N60
Package
TO-220
TO-220F
Reel Size
-
-
Tape Width
-
-
Quantity
50
50
Electrical Characteristics
T C = 25°C unless otherwise noted
Symbol
Parameter
Conditions
Min
Typ
Max Units
Off Characteristics
BV DSS
? BV DSS
/ ? T J
BV DS
I DSS
I GSSF
I GSSR
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Drain-Source Avalanche Breakdown
Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
V GS = 0V, I D = 250 μ A, T J = 25 ° C
V GS = 0V, I D = 250 μ A, T J = 150 ° C
I D = 250 μ A, Referenced to 25 ° C
V GS = 0V, I D = 20A
V DS = 600V, V GS = 0V
V DS = 480V, T C = 125 ° C
V GS = 30V, V DS = 0V
V GS = -30V, V DS = 0V
600
--
--
--
--
--
--
--
--
650
0.6
700
--
--
--
--
--
--
--
--
1
10
100
-100
V
V
V/ ° C
V
μ A
μ A
nA
nA
On Characteristics
V GS(th)
R DS(on)
Gate Threshold Voltage
Static Drain-Source
On-Resistance
V DS = V GS , I D = 250 μ A
V GS = 10V, I D = 10A
3.0
--
--
0.15
5.0
0.19
V
?
g FS
Forward Transconductance
V DS = 40V, I D = 10A
(Note 4)
--
17
--
S
Dynamic Characteristics
C iss
C oss
C rss
C oss
C oss eff.
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Effective Output Capacitance
V DS = 25V, V GS = 0V,
f = 1.0MHz
V DS = 480V, V GS = 0V, f = 1.0MHz
V DS = 0V to 400V, V GS = 0V
--
--
--
--
--
2370
1280
95
65
165
3080
1665
--
85
--
pF
pF
pF
pF
pF
Switching Characteristics
t d(on)
t r
t d(off)
t f
Q g
Q gs
Q gd
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V DD = 300V, I D = 20A
R G = 25 ?
V DS = 480V, I D = 20A
V GS = 10V
(Note 4, 5)
(Note 4, 5)
--
--
--
--
--
--
--
62
140
230
65
75
13.5
36
135
290
470
140
98
18
--
ns
ns
ns
ns
nC
nC
nC
Drain-Source Diode Characteristics and Maximum Ratings
I S
I SM
Maximum Continuous Drain-Source Diode Forward Current
Maximum Pulsed Drain-Source Diode Forward Current
--
--
--
--
20
60
A
A
V SD
Drain-Source Diode Forward Voltage
V GS = 0V, I S = 20A
--
--
1.4
V
t rr
Q rr
Reverse Recovery Time
Reverse Recovery Charge
V GS = 0V, I S = 20A
dI F /dt =100A/ μ s
(Note 4)
--
--
530
10.5
--
--
ns
μ C
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. I AS = 10A, V DD = 50V, R G = 25 ? , Starting T J = 25 ° C
3. I SD ≤ 20A, di/dt ≤ 200A/ μ s, V DD ≤ BV DSS , Starting T J = 25 ° C
4. Pulse Test: Pulse width ≤ 300 μ s, Duty Cycle ≤ 2%
5. Essentially Independent of Operating Temperature Typical Characteristics
FCP20N60 / FCPF20N60 Rev. A 2
2
www.fairchildsemi.com
相关PDF资料 |
PDF描述 |
|---|---|
| FCPF22N60NT | MOSFET N-CH 600V 22A TO-220F |
| FCPF380N60 | MOSFET N-CH 600V TO-220-3 |
| FCPF400N60 | MOSFET N-CH 600V TO-220-3 |
| FCPF7N60NT | MOSFET N-CH 600V 6.8A TO-220F |
| FCPF7N60T | MOSFET N-CH 600V 7A TO-220F |
相关代理商/技术参数 |
参数描述 |
|---|---|
| FCPF20N60TYDTU | 功能描述:MOSFET 600V N-Channel SuperFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FCPF21N60NT | 功能描述:MOSFET SupreMOS, 21A TO220F RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FCPF22N60NT | 功能描述:MOSFET 600V N-Channel SupreMOS RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FCPF260N60E | 功能描述:MOSFET Low Power Two-Input Logic Gate TinyLogic RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FCPF260N60E_F152 | 制造商:Fairchild Semiconductor Corporation 功能描述:SUPERFET2, 260MOHM, TO220F 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N CH 600V 15A TO-220F 制造商:Fairchild Semiconductor Corporation 功能描述:RAIL / SuperFET2, 260mohm, TO220F |
发布紧急采购，3分钟左右您将得到回复。