参数资料
型号: FDB035AN06A0
厂商: Fairchild Semiconductor
文件页数: 9/12页
文件大小: 0K
描述: MOSFET N-CH 60V 80A TO-263AB
产品培训模块: High Voltage Switches for Power Processing
标准包装: 1
系列: PowerTrench®
FET 型: MOSFET N 通道,金属氧化物
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 60V
电流 - 连续漏极(Id) @ 25° C: 80A
开态Rds(最大)@ Id, Vgs @ 25° C: 3.5 毫欧 @ 80A,10V
Id 时的 Vgs(th)(最大): 4V @ 250µA
闸电荷(Qg) @ Vgs: 124nC @ 10V
输入电容 (Ciss) @ Vds: 6400pF @ 25V
功率 - 最大: 310W
安装类型: 表面贴装
封装/外壳: TO-263-3,D²Pak(2 引线+接片),TO-263AB
供应商设备封装: TO-263AB
包装: 标准包装
产品目录页面: 1606 (CN2011-ZH PDF)
其它名称: FDB035AN06A0DKR
SABER Electrical Model
rev July 4, 2002
template FDB035AN06A0 n2,n1,n3 = m_temp
electrical n2,n1,n3
number m_temp=25
{
var i iscl
dp..model dbodymod = (isl=2.4e-11,nl=1.04,rs=1.65e-3,trs1=2.7e-3,trs2=2e-7,cjo=4.35e-9,m=5.4e-1,tt=1e-9,xti=3.9)
dp..model dbreakmod = (rs=1.5e-1,trs1=1e-3,trs2=-8.9e-6)
dp..model dplcapmod = (cjo=1.7e-9,isl=10e-30,nl=10,m=0.47)
m..model mmedmod = (type=_n,vto=3.3,kp=9,is=1e-30, tox=1)
m..model mweakmod = (type=_n,vto=2.72,kp=0.03,is=1e-30, tox=1,rs=0.1 DP LCAP
10
RSLC2
m..model mstrongmod = (type=_n,vto=4.00,kp=275,is=1e-30, tox=1)
sw_vcsp..model s1amod = (ron=1e-5,roff=0.1,von=-4,voff=-1.5)
sw_vcsp..model s1bmod = (ron=1e-5,roff=0.1,von=-1.5,voff=-4)
sw_vcsp..model s2amod = (ron=1e-5,roff=0.1,von=-1,voff=0.5)
sw_vcsp..model s2bmod = (ron=1e-5,roff=0.1,von=0.5,voff=-1)
c.ca n12 n8 = 1.5e-9
c.cb n15 n14 = 1.5e-9
)
5
RSLC1
51
ISCL
LDRAIN
RLDRAIN
DRAIN
2
GATE
1
9
20
21
+
c.cin n6 n8 = 6.1e-9
dp.dbody n7 n5 = model=dbodymod
dp.dbreak n5 n11 = model=dbreakmod
dp.dplcap n10 n5 = model=dplcapmod
spe.ebreak n11 n7 n17 n18 = 69.3
spe.eds n14 n8 n5 n8 = 1
spe.egs n13 n8 n6 n8 = 1
spe.esg n6 n10 n6 n8 = 1
spe.evthres n6 n21 n19 n8 = 1
LGATE
RLGATE
-
ESG
+
EVTEMP
RGATE + 18 -
22
6
8
6
EVTHRES
+ 19 -
8
CIN
50
RDRAIN
16
MMED
MSTRO
8
DBREAK
11
MWEAK
EBREAK
17
18
-
7
DBODY
LSOURCE
SOURCE
3
spe.evtemp n20 n6 n18 n22 = 1
RSOURCE
RLSOURCE
S1A S2A
12
8 13
13 CB
CA
EGS
EDS
8
-
-
i.it n8 n17 = 1
l.lgate n1 n9 = 4.81e-9
l.ldrain n2 n5 = 1.0e-9 S1B S2B
l.lsource n3 n7 = 4.63e-9
res.rlgate n1 n9 = 48.1 6
res.rldrain n2 n5 = 10
res.rlsource n3 n7 = 46.3
m.mmed n16 n6 n8 n8 = model=mmedmod, temp=m_temp, l=1u, w=1u
13   14 15
+ +
5
8
14
8
17
IT
RBREAK
RVTHRES
18
RVTEMP
19
-
VBAT
+
22
m.mstrong n16 n6 n8 n8 = model=mstrongmod, temp=m_temp, l=1u, w=1u
m.mweak n16 n21 n8 n8 = model=mweakmod, temp=m_temp, l=1u, w=1u
res.rbreak n17 n18 = 1, tc1=9e-4,tc2=-9e-7
res.rdrain n50 n16 = 1e-4, tc1=4e-2,tc2=1.75e-4
res.rgate n9 n20 = 1.36
res.rslc1 n5 n51 = 1e-6, tc1=1e-3,tc2=1e-5
res.rslc2 n5 n50 = 1e3
res.rsource n8 n7 = 2.5e-3, tc1=5e-3,tc2=1e-6
res.rvthres n22 n8 = 1, tc1=-6.7e-3,tc2=-1.5e-5
res.rvtemp n18 n19 = 1, tc1=-2.5e-3,tc2=1e-6
sw_vcsp.s1a n6 n12 n13 n8 = model=s1amod
sw_vcsp.s1b n13 n12 n13 n8 = model=s1bmod
sw_vcsp.s2a n6 n15 n14 n13 = model=s2amod
sw_vcsp.s2b n13 n15 n14 n13 = model=s2bmod
v.vbat n22 n19 = dc=1
equations {
i (n51->n50) +=iscl
iscl: v(n51,n50) = ((v(n5,n51)/(1e-9+abs(v(n5,n51))))*((abs(v(n5,n51)*1e6/250))** 10))
}
?2002 Fairchild Semiconductor Corporation
FDB035AN06A0 Rev. C2
9
www.fairchildsemi.com
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