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参数资料
| 型号： | FDB039N06 |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 1/8页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 60V 120A D2PAK |
| 产品目录绘图： | D2PAK, TO-263AB Pkg |
| 标准包装： | 1 |
| 系列： | PowerTrench® |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 60V |
| 电流 - 连续漏极(Id) @ 25° C： | 120A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 3.9 毫欧 @ 75A，10V |
| Id 时的 Vgs(th)（最大）： | 4.5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 133nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 8235pF @ 25V |
| 功率 - 最大： | 231W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-263-3，D²Pak（2 引线+接片），TO-263AB |
| 供应商设备封装： | D²PAK |
| 包装： | 标准包装 |
| 产品目录页面： | 1606 (CN2011-ZH PDF) |
| 其它名称： | FDB039N06DKR |
March 2013
FDB039N06
N-Channel PowerTrench ? MOSFET
60 V, 174 A, 3.9 m Ω
Features
? R DS(on) = 2.95 m Ω ( Typ.) @ V GS = 10 V, I D = 75 A
? Fast Switching Speed
? Low Gate Charge
? High Performance Trench Technology for Extremely Low
R DS(on)
? High Power and Current Handling Capability
? RoHS Compliant
D
D 2 -PAK
General Description
This N-Channel MOSFET is produced using Fairchild
Semiconductor ? ’s advanced PowerTrench ? process that has
been tailored to minimize the on-state resistance while maintain-
ing superior switching performance.
Applications
? Synchronous Rectification for ATX / Server / Telecom PSU
? Battery Protection Circuit
? Motor drives and Uninterruptible Power Supplies
? Renewable system
D
G
G
S
S
MOSFET Maximum Ratings T C = 25 o C unless otherwise noted
Symbol
V DSS
V GSS
Drain to Source Voltage
Gate to Source Voltage
Parameter
-Continuous (T C = 25 o C, Silicion Limited)
FDB039N06
60
±20
174*
Unit
V
V
I D
Drain Current
-Continuous (T C = 100 o C, Silicion Limited)
123*
A
-Continuous (T C = 25 o C, Package Limited)
120
I DM
Drain Current
- Pulsed
(Note 1)
696
A
E AS
dv/dt
P D
Single Pulsed Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
(T C = 25 o C)
- Derate above 25 o C
(Note 2)
(Note 3)
872
7.0
231
1.54
mJ
V/ns
W
W/ o C
T J , T STG
T L
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
-55 to +175
300
o
o
C
C
* Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 120A.
Thermal Characteristics
Symbol
R θ JC
Parameter
Thermal Resistance, Junction to Case, Max.
FDB039N06
0.65
Unit
Thermal Resistance, Junction to Ambient (1 in pad of 2 oz copper), Max.
R θ JA
Thermal Resistance, Junction to Ambient (minimum pad of 2 oz copper), Max.
2
62.5
40
o
C/W
?2009 Fairchild Semiconductor Corporation
FDB039N06 Rev. C1
1
www.fairchildsemi.com
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相关代理商/技术参数 |
参数描述 |
|---|---|
| FDB039N06_12 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:N-Channel PowerTrench?? MOSFET 60V, 174A, 3.9m?? |
| FDB045AN08 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:N-Channel UltraFET Trench MOSFET 75V, 80A, 4.5mз |
| FDB045AN08_F085 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:N-Channel PowerTrench?? MOSFET 75V, 80A, 4.5m |
| FDB045AN08A0 | 功能描述:MOSFET N-Channel UltraFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDB045AN08A0 | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET |
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