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参数资料
| 型号： | FDB039N06 |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 2/8页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 60V 120A D2PAK |
| 产品目录绘图： | D2PAK, TO-263AB Pkg |
| 标准包装： | 1 |
| 系列： | PowerTrench® |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 60V |
| 电流 - 连续漏极(Id) @ 25° C： | 120A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 3.9 毫欧 @ 75A，10V |
| Id 时的 Vgs(th)（最大）： | 4.5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 133nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 8235pF @ 25V |
| 功率 - 最大： | 231W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-263-3，D²Pak（2 引线+接片），TO-263AB |
| 供应商设备封装： | D²PAK |
| 包装： | 标准包装 |
| 产品目录页面： | 1606 (CN2011-ZH PDF) |
| 其它名称： | FDB039N06DKR |
Package Marking and Ordering Information
Device Marking
FDB039N06
Device
FDB039N06
Package
TO-263
Reel Size
Tube
Tape Width
-
Quantity
50
Electrical Characteristics T C = 25 o C unless otherwise noted
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
Off Characteristics
BV DSS
Δ BV DS S
Δ T J
I DSS
I GSS
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Body Leakage Current
I D = 250 μ A, V GS = 0V, T C = 25 o C
I D = 250 μ A, Referenced to 25 o C
V DS = 60V, V GS = 0V
V DS = 60V, V GS = 0V, T C = 150 o C
V GS = ±20V, V DS = 0V
60
-
-
-
-
-
0.04
-
-
-
-
-
1
500
±100
V
V/ o C
μ A
nA
On Characteristics
V GS(th)
R DS(on)
g FS
Gate Threshold Voltage
Static Drain to Source On Resistance
Forward Transconductance
V GS = V DS , I D = 250 μ A
V GS = 10V, I D = 75A
V DS = 10V, I D = 75A
2.5
-
-
3.5
2.95
169
4.5
3.9
-
V
m Ω
S
Dynamic Characteristics
C iss
C oss
C rss
Q g(tot)
Q gs
Q gd
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge at 10V
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
V DS = 25V, V GS = 0V
f = 1MHz
V DS = 48V, I D = 75A
V GS = 10V
(Note 4)
-
-
-
-
-
-
6190
900
385
102
32
32
8235
1195
580
133
-
-
pF
pF
pF
nC
nC
nC
Switching Characteristics
t d(on)
Turn-On Delay Time
-
30
70
ns
t r
t d(off)
t f
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
V DD = 30V, I D = 75A
V GS = 10V, R GEN = 4.7 Ω
(Note 4)
-
-
-
40
55
24
90
120
58
ns
ns
ns
Drain-Source Diode Characteristics
I S
I SM
Maximum Continuous Drain to Source Diode Forward Current
Maximum Pulsed Drain to Source Diode Forward Current
-
-
-
-
174
696
A
A
V SD
t rr
Q rr
Drain to Source Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
V GS = 0V, I SD = 75A
V GS = 0V, I SD = 75A
dI F /dt = 100A/ μ s
-
-
-
-
41
47
1.3
-
-
V
ns
nC
Notes:
1: Repetitive Rating: Pulse width limited by maximum junction temperature
2: L = 0.31mH, I AS = 75A, V DD = 50V, R G = 25 Ω , Starting T J = 25°C
3: I SD ≤ 75A, di/dt ≤ 200A/ μ s, V DD ≤ BV DSS , Starting T J = 25°
4: Essentially Independent of Operating Temperature Typical Characteristics
?2009 Fairchild Semiconductor Corporation
FDB039N06 Rev. C1
2
www.fairchildsemi.com
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