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参数资料
| 型号： | FDB047N10 |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 1/8页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 100V 120A D2PAK |
| 标准包装： | 1 |
| 系列： | PowerTrench® |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 100V |
| 电流 - 连续漏极(Id) @ 25° C： | 120A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 4.7 毫欧 @ 75A，10V |
| Id 时的 Vgs(th)（最大）： | 4.5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 210nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 15265pF @ 25V |
| 功率 - 最大： | 375W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-263-3，D²Pak（2 引线+接片），TO-263AB |
| 供应商设备封装： | D²PAK |
| 包装： | 标准包装 |
| 产品目录页面： | 1606 (CN2011-ZH PDF) |
| 其它名称： | FDB047N10DKR |
November 2013
FDB047N10
N-Channel PowerTrench ? MOSFET
100 V, 164 A, 4.7 m Ω
Features
? R DS(on) = 3.9 m Ω (Typ.) @ V GS = 10 V, I D = 75 A
? Fast Switching Speed
? Low Gate Charge
? High Performance Trench Technology for Extremely Low
R DS(on)
? High Power and Current Handling Capability
? RoHS Compliant
Description
This N-Channel MOSFET is produced using Fairchild Semicon-
ductor ’s advanced PowerTrench ? process that has been tai-
lored to minimize the on-state resistance while maintaining
superior switching performance.
Applications
? Synchronous Rectification for ATX / Server / Telecom PSU
? Battery Protection Circuit
? Motor Drives and Uninterruptible Power Supplies
? Micro Solar Inverter
D
D
G
S
D 2 -PAK
G
S
MOSFET Maximum Ratings T C = 25 o C unless otherwise noted.
Symbol
V DSS
V GSS
Drain to Source Voltage
Gate to Source Voltage
Parameter
FDB047N10
100
±20
Unit
V
V
I D
Drain Current
- Continuous (T C = 25 o C, Silicon Limited)
- Continuous (T C = 100 o C, Silicon Limited)
- Continuous (T C = 25 o C, Package Limited)
164*
116*
120
A
A
A
I DM
Drain Current
- Pulsed
(Note 1)
656*
A
E AS
dv/dt
P D
Single Pulsed Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
(T C = 25 o C)
- Derate Above 25 o C
(Note 2)
(Note 3)
1153
6.0
375
2.5
mJ
V/ns
W
W/ o C
T J , T STG
T L
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds
-55 to +175
300
o
o
C
C
* Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 120A.
Thermal Characteristics
Thermal Resistance, Junction to Ambient (1 in Pad of 2-oz Copper), Max.
Symbol
R θ JC
R θ JA
Parameter
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient (Minimum Pad of 2-oz Copper), Max.
2
FDB047N10
0.4
62.5
40
Unit
o C/W
?2008 Fairchild Semiconductor Corporation
FDB047N10 Rev. C2
1
www.fairchildsemi.com
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相关代理商/技术参数 |
参数描述 |
|---|---|
| FDB047N10_12 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:N-Channel PowerTrench?? MOSFET 100V, 164A, 4.7mW |
| FDB047N10-CUT TAPE | 制造商:FAIRCHILD 功能描述:FDB047N10 Series 100 V 4.7 mOhms N-Channel PowerTrench Mosfet - D2PAK-3 |
| FDB050AN06A0 | 功能描述:MOSFET 60V N-Ch PowerTrench MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDB050AN06A0_SN00269 | 制造商:Fairchild Semiconductor Corporation 功能描述:60V,80A,5MOHM,D2PAK |
| FDB060AN08A0 | 功能描述:MOSFET Discrete Auto N-Ch PowerTrench RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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