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参数资料
| 型号： | FDB088N08 |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 1/8页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 75V 75A D2PAK |
| 产品目录绘图： | D2PAK, TO-263AB Pkg |
| 标准包装： | 1 |
| 系列： | PowerTrench® |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 75V |
| 电流 - 连续漏极(Id) @ 25° C： | 120A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 8.8 毫欧 @ 75A，10V |
| Id 时的 Vgs(th)（最大）： | 4V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 118nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 6595pF @ 25V |
| 功率 - 最大： | 160W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-263-3，D²Pak（2 引线+接片），TO-263AB |
| 供应商设备封装： | D²PAK |
| 包装： | 标准包装 |
| 其它名称： | FDB088N08DKR |
November 2013
FDB088N08
N-Channel PowerTrench ? MOSFET
75 V, 85 A, 8.8 m Ω
Features
? R DS(on) = 7.3 m Ω (Typ.) @ V GS = 10 V, I D = 75 A
? Fast Switching Speed
? Low Gate Charge
? High Performance Trench Technology for Extremely Low
R DS(on)
? High Power and Current Handling Capability
? 100% Internal R G Screening for Easy Paralleling Operation
? RoHS Compliant
Description
This N-Channel MOSFET is produced using Fairchild Semicon-
ductor ’s advanced PowerTrench ? process that has been tai-
lored to minimize the on-state resistance while maintaining
superior switching performance.
Applications
? Synchronous Rectification for ATX / Server / Telecom PSU
? Battery Protection Circuit
? Motor Drives and Uninterruptible Power Supplies
D
D
G
S
D 2 -PAK
G
S
Absolute Maximum Ratings T C = 25 o C unless otherwise noted.
Symbol
V DSS
V GSS
Drain to Source Voltage
Gate to Source Voltage
Parameter
FDB088N08
75
±20
Unit
V
V
- Continuous (T C = 25 C, Silicon Limited)
I D
Drain Current
o
- Continuous (T C = 100 o C, Silicon Limited)
- Continuous (T C = 25 o C, Package Limited)
85
60
120
A
A
A
I DM
Drain Current
- Pulsed
(Note 1)
340
A
E AS
dv/dt
P D
Single Pulsed Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
(T C = 25 o C)
- Derate above 25 o C
(Note 2)
(Note 3)
309
10
160
1.06
mJ
V/ns
W
W/ o C
T J , T STG
T L
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds
-55 to +175
300
o
o
C
C
Thermal Characteristics
Symbol
Parameter
FDB088N08
Unit
Thermal Resistance, Junction to Ambient (1 in Pad of 2-oz Copper), Max.
R θ JC
R θ JA
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient (Minimum Pad of 2-oz Copper), Max.
2
0.94
62.5
40
o
C/W
?2009 Fairchild Semiconductor Corporation
FDB088N08 Rev. C2
1
www.fairchildsemi.com
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