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参数资料
| 型号： | FDB12N50UTM_WS |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 1/8页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 500V 10A D2PAK |
| 产品目录绘图： | D2PAK, TO-263AB Pkg |
| 标准包装： | 1 |
| 系列： | FRFET™ |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 500V |
| 电流 - 连续漏极(Id) @ 25° C： | 10A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 800 毫欧 @ 5A，10V |
| Id 时的 Vgs(th)（最大）： | 5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 30nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 1395pF @ 25V |
| 功率 - 最大： | 165W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-263-3，D²Pak（2 引线+接片），TO-263AB |
| 供应商设备封装： | D²PAK |
| 包装： | 标准包装 |
| 其它名称： | FDB12N50UTM_WSDKR |
April 2013
FDB12N50U
N-Channel UniFET TM Ultra FRFET TM MOSFET ?
500 V, 10 A, 800 m ?
Features
? R DS(on) = 650 m ? (Typ.) @ V GS = 10 V, I D = 5 A
? Low Gate Charge (Typ. 21 nC)
? Low Crss (Typ. 11pF)
? 100% Avalanche Tested
? Improved dv/dt Capability
? RoHS Compliant
Applications
? Lighting
? Uninterruptible Power Supply
Description
UniFET TM MOSFET is Fairchild Semiconductor ? ’s high voltage
MOSFET family based on planar stripe and DMOS technology.
This MOSFET is tailored to reduce on-state resistance, and to
provide better switching performance and higher avalanche
energy strength. UniFET Ultra FRFET TM MOSFET has much
superior body diode reverse recovery performance. Its t rr is less
than 50nsec and the reverse dv/dt immunity is 20V/nsec while
normal planar MOSFETs have over 200nsec and 4.5V/nsec
respectively. Therefore UniFET Ultra FRFET MOSFET can
remove additional component and improve system reliability in
certain applications that require performance improvement of the
MOSFET’s body diode. This device family is suitable for switch-
ing power converter applications such as power factor correction
(PFC), flat panel display (FPD) TV power, ATX and electronic
lamp ballasts.
? AC-DC Power Supply
D
D
G
G
S
D 2 -PAK
S
MOSFET Maximum Ratings T C = 25 o C unless otherwise noted*
Symbol
V DSS
Drain to Source Voltage
Parameter
FDB12N50U
500
Unit
V
V GSS
I D
Gate to Source Voltage
Drain Current
- Continuous (T C = 25 o C)
- Continuous (T C = 100 o C)
±30
10
6
V
A
I DM
Drain Current
- Pulsed
(Note 1)
40
A
E AS
I AR
E AR
dv/dt
P D
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
(T C = 25 o C)
- Derate above 25 o C
(Note 2)
(Note 1)
(Note 1)
(Note 3)
456
10
16.5
20
165
1.33
mJ
A
mJ
V/ns
W
W/ o C
T J , T STG
T L
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
-55 to +150
300
o
o
C
C
Thermal Characteristics
Symbol
Parameter
FDB12N50U
Unit
R ? JC
R ? JA
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient, Max.
0.75
62.5
o
C/W
?2012 Fairchild Semiconductor Corporation
FDB12N50U Rev.C0
1
www.fairchildsemi.com
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