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参数资料
| 型号： | FDB14AN06LA0_F085 |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 1/11页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 60V 67A D2PAK |
| 标准包装： | 800 |
| 系列： | PowerTrench® |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 60V |
| 电流 - 连续漏极(Id) @ 25° C： | 67A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 11.6 毫欧 @ 67A，10V |
| Id 时的 Vgs(th)（最大）： | 3V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 31nC @ 5V |
| 输入电容 (Ciss) @ Vds： | 2900pF @ 25V |
| 功率 - 最大： | 125W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-263-3，D²Pak（2 引线+接片），TO-263AB |
| 供应商设备封装： | TO-263 |
| 包装： | 带卷 (TR) |
December 2010
FDB14AN06LA0_F085
N-Channel PowerTrench ? MOSFET
60V, 60A, 14.6m ?
Features
? r DS(ON) = 12.8m ? (Typ.), V GS = 5V, I D = 60A
? Q g (tot) = 24nC (Typ.), V GS = 5V
? Low Miller Charge
? Low Q RR Body Diode
? UIS Capability (Single Pulse and Repetitive Pulse)
? Qualified to AEC Q101
? RoHS Compliant
Applications
? Motor / Body Load Control
? ABS Systems
? Powertrain Management
? Injection Systems
? DC-DC converters and Off-line UPS
? Distributed Power Architectures and VRMs
? Primary Switch for 12V and 24V systems
Formerly developmental type 83557
D
GATE
G
SOURCE
DRAIN
TO-263AB
(FLANGE)
S
FDB SERIES
MOSFET Maximum Ratings T C = 25°C unless otherwise noted
Symbol
V DSS
V GS
Drain to Source Voltage
Gate to Source Voltage
Parameter
Ratings
60
± 20
Units
V
V
Drain Current
Continuous (T C = 25 o C, V GS = 10V)
67
A
Continuous (T C = 25 C, V GS = 5V)
C
I D
E AS
P D
T J , T STG
o
Continuous (T A = 25 o C, V GS = 5V, R θ JA = 43 o C/W)
Pulsed
Single Pulse Avalanche Energy (Note 1)
Power dissipation
Derate above 25 o C
Operating and Storage Temperature
60
10
Figure 4
46
125
0.83
-55 to 175
A
A
A
mJ
W
W/ o C
o
Thermal Characteristics
R θ JC
Maximum Thermal Resistance Junction to Case TO-263
1.2
o C/W
R θ JA
Maximum Thermal Resistance Junction to Ambient TO-263, 1in 2
copper pad area
43
o
C/W
This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a
copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/
Reliability data can be found at: http://www.fairchildsemi.com/products/discrete/reliability/index.html.
All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems
certification.
?2010 Fairchild Semiconductor Corporation
FDB14AN06LA0_F085 Rev. C
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相关代理商/技术参数 |
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| FDB14N30 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:300V N-Channel MOSFET |
| FDB14N30TM | 功能描述:MOSFET 300V N-Ch MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDB150N10 | 功能描述:MOSFET 100V N-Channel PowerTrench RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDB15N50 | 功能描述:MOSFET 15A 500V 0.38 Ohm N-Ch SMPS Pwr RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDB15N50 | 制造商:Fairchild Semiconductor Corporation 功能描述:N CHANNEL MOSFET 500V 15A TO-263 |
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